RK7002AT116 Discrete Semiconductor Products |
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Allicdata Part #: | RK7002AT116TR-ND |
Manufacturer Part#: |
RK7002AT116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 300MA SOT-23 |
More Detail: | N-Channel 60V 300mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | RK7002AT116 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 33pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The RK7002AT116 is a silicon gate N-Channel field effect transistor (FET) specifically designed for high frequency switch mode power supplies, line-powered equipment, battery-powered equipment, high performance switching, amplifier circuits, high voltage/high current switching, DC-DC converters in medium to high power applications.
The RK7002AT116 is part of a family of N-Channel enhancement mode FETs from the company Ricoh. It has a low drain source on-resistance, low gate charge, improved avalanche capability and excellent thermal performance. Its small die and very low capacitance make this transistor ideal for high-speed applications. This transistor is designed to operate over a wide temperature range and is available with a variety of lead styles.
The RK7002AT116 is used to control the flow of current through a load by using a very small applied voltage to the gate terminal. This transistor turns on when the gate is heated and turns off when the gate is cooled. The reason it works this way is because the resistance between the drain and the source of the transistor varies with the temperature of the gate. The transistor is “on” when the temperature of the gate is above the threshold voltage and “off” when the temperature is below the threshold voltage.
The RK7002AT116 Field Effect Transistor has the following characteristics:
- Drain-Source voltage of up to 5 V
- Drain current of up to 5 A
- On-state resistance of 50 mOhms
- Off-state leakage of 1 μA
- Gate-Source capacitance of 0.5 pF
- Gate-Drain capacitance of 2 pF
The use of the RK7002AT116 FET makes it suitable for applications requiring high-speed switching and fast operating times. It is commonly used in applications such as lighting, motor control, and switching power supplies. It is also used in radio frequency and microwave circuits and circuits that require a low input capacitance. This transistor can be used in designs that require low gate drive power.
The RK7002AT116 also offers an advantage in terms of its excellent thermal performance, which enables it to operate in extreme temperatures. Its low gate charge and improved avalanche capability ensure reliable operation over a wide operating temperature range. The RK7002AT116 is available in a variety of lead styles for use with different applications.
In conclusion, the RK7002AT116 is a popular N-Channel enhancement mode Field Effect Transistor from the company Ricoh. This transistor can be used in a variety of applications requiring high-speed switching or fast operating times. Its low drain source on-resistance, low gate charge, excellent thermal performance, and improved avalanche capability make it suitable for high-performance applications. The RK7002AT116 is also available in a variety of lead styles for use in different applications.
The specific data is subject to PDF, and the above content is for reference
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