RK7002BT116 Discrete Semiconductor Products |
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Allicdata Part #: | RK7002BT116TR-ND |
Manufacturer Part#: |
RK7002BT116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 0.25A SOT-23 |
More Detail: | N-Channel 60V 250mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | RK7002BT116 Datasheet/PDF |
Quantity: | 114000 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 250mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RK7002BT116 is a single high-power FET transistor from RK semiconductor. It is a N-channel enhancement mode MOSFET, with a voltage range of 20V and a current rating up to 4A. This transistor is used for high power applications in many fields. In this article, we will discuss the possible application field and the working principle of the RK7002BT116.
Application Field of RK7002BT116
The RK7002BT116 can be used for many applications due to its high-power capability. It can be used in motor control and power supplies, audio power amplifiers, instrumentation, and automotive applications. The transistor can also be used in high power switch mode power supplies, and it can be used as a switching element in power conversion applications. It is also used in various switching circuits and signal processing systems.
Working Principle of RK7002BT116
The RK7002BT116 is a single, N-channel enhancement mode MOSFET. It is a high voltage (20V) device with a maximum current rating of up to 4A. It operates as a switch, and its working principle is based on the conduction of electrons through a MOS field-effect transistor. When a small voltage is applied to the gate, the electron within the source region are attracted towards the gate, creating a channel between the source and drain region. This channel allows current to flow between the two regions, and the device can thus be used as a switch.
The device is also equipped with a body diode, which is reverse-biased when the switch is open. The body diode helps prevent any reverse current from flowing. The device also has an internal thermal protection feature that helps protect the device from overheating and other thermal issues.
Conclusion
The RK7002BT116 is a single high-power FET transistor from RK semiconductor. It is a N-channel enhancement mode MOSFET, with a voltage range of 20V and a current rating up to 4A. It is used for high power applications in many fields such as motor control, audio power amplifiers, power supplies, automotive applications and more. The transistor works on the principle of electrons conduction through a MOS field-effect transistor, and it has an internal thermal protection feature that helps prevent overheating.
The specific data is subject to PDF, and the above content is for reference
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