RK7002BMT116 Discrete Semiconductor Products

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The RK7002BMT116 is a part of the Rohm transistor family. It is a field-effect transistor (FET) that comes in a single package. It is classified as a silicon-oxide–nitride–oxide–semiconductor (SONOS) process in the linearly low-to-slightly-high-power logic circuits range, and it is designed to be used in any type of electronic device that requires such a device, as it offers an excellent combination of compatibility and performance, making it a great choice for all of your circuit design needs.

The RK7002BMT116 comes in a variety of sizes and packages, making it a very versatile component in a wide range of applications. It is mainly used in electric, automotive, and telecom applications, and is ideal for low-to-moderate-power logic, analog, and digital circuit designs. It is also very suitable for high-power switching applications, such as H-bridge motor drives, power supplies, and processors, and can also be used in high-power AC/DC, DC/DC, or AC/AC converters.

The RK7002BMT116 offers a good combination of features, including a low on-resistance drain-source between 0.4Ω and 0.5Ω, an operating voltages of 0 to 18V, an ultra-low quiescent current of 0.6mA, a very high switching speed of 300kHz, an excellent dV/dt immunity of 3.6V/ns, and a high frequency range of up to 30MHz. Moreover, this device has superior noise immunity and is highly stable when exposed to mechanical vibration and temperature changes. It also offers a wide range of applications due to its ability to operate in high-temperature environments.

The working principle behind the RK7002BMT116 is that it is a depletion-mode MOSFET, which means that its conduction is through electrons or hole carriers. The devices are made of silicon with a unique built-in-gate structure, which is polymer-based and has an excellent thermal stability. The built-in-gate concept allows the device to maintain a low gate current level, even in high-temperature environments.

When the gate-source voltage of the RK7002BMT116 device is high, the electric field between its two terminals will increase, resulting in an increase in the electron current from the source to the drain. This will cause the device to be in a conducting state, allowing current to flow between the source and the drain. Conversely, when the gate-source voltage is low, the electrons will be repelled and the device will be in a non-conducting state. In this situation, the current from the source to the drain will be blocked, thus preventing further conduction.

The RK7002BMT116 field-effect transistor is ideal for a variety of applications, ranging from low-power logic to high-power switching. Its unique features, such as its ultra-low quiescent current, a very high switching speed, excellent dV/dt immunity, and high frequency range, allow it to be used in a wide range of situations. And since it is highly stable and immune to temperature changes and mechanical vibrations, the RK7002BMT116 is an excellent choice for any application needing a reliable, high-performance transistor.

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