RK7002T116 Discrete Semiconductor Products |
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Allicdata Part #: | RK7002T116TR-ND |
Manufacturer Part#: |
RK7002T116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 115MA SOT-23 |
More Detail: | N-Channel 60V 115mA (Ta) 225mW (Ta) Surface Mount ... |
DataSheet: | RK7002T116 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 225mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 115mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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RK7002T116 is a type of single-gate transistor, and is most commonly categorized as a Field Effect Transistor, or FET. It is a three-terminal device, with two terminals (the source and drain) connected to a junction, and the third terminal (the gate) connected to a gate terminal. The gate terminal is insulated from the other two terminals, and the electric field generated by the application of a voltage to the gate terminal is used to modulate the conductivity between the source and drain terminals.
The RK7002T116 facilitates the ability to control the electrical flow with minimal amount of current. This is accomplished by utilizing the electric field generated by the gate to alter the conductivity of the junction. Simply put, if the voltage applied to the gate terminal is increased, the electric field strength increases, which in turn increases the conductivity between the source and drain terminals. This allows a much smaller amount of current to satisfactorily control the electrical flow between the source and drain terminals – thus making the RK7002T116 an effective and efficient choice.
As far as applications are concerned, the RK7002T116 is well-suited for many tasks. It excels in digital signal processing applications, as it is able to quickly respond to voltage changes. It is also commonly used in wireless communication systems, as its ability to modulate the electrical flow with a minimal amount of current allows for high-efficiency communication. Additionally, due to its low capacitance, the RK7002T116 is also commonly used in high-frequency switching operations.
The RK7002T116 shares key similarities with its predecessor, the RK7000T116. Both transistors exhibit similar low on-resistance ratings and low noise levels. Additionally, both transistors are able to handle relatively large drain currents, and are extremely fast with regards to their switching capabilities. When comparing the two transistors on a performance basis, the RK7002T116 is the clear winner as it is especially adept at handling voltage changes, resulting in a higher efficiency rating.
In conclusion, the RK7002T116 is an advanced single-gate transistor that performs exceptionally in many applications. It is well suited for digital signal processing, wireless communication systems, and high-frequency switching operations, as well as many other applications. Thanks to its low on-resistance rating and low noise levels, its ability to modulate the electrical flow with a minimal amount of current, and its fast switching capabilities, the RK7002T116 provides a great solution for many challenges.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RK7002T116 | ROHM Semicon... | -- | 1000 | MOSFET N-CH 60V 115MA SOT... |
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