RN1406S,LF(D Allicdata Electronics
Allicdata Part #:

RN1406SLF(D-ND

Manufacturer Part#:

RN1406S,LF(D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.2W SMINI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1406S,LF(D datasheetRN1406S,LF(D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN1406S, to a large degree, is a pre-biased single bipolar transistor that is both commonly used and a highly effective tool in an expansive range of applications. The RN1406S is an optimized version of the tried and trusted NJW0281G, which itself is a broadly used single NPN transistor, with enhanced parameters and functions, making it suitable for an even broad range of applications.

The pre-biased features of this transistor increase its convenience, with the pre-bias bias being adjustable depending on the requirement and application. This adjustable bias also helps with cutting down on oscillations and reduces the amount of power drawn from external sources, meaning that the RN1406S is also a highly energy-efficient transistor.

The RN1406S is also great a dissipating high voltages, meaning that it can be integrated effectively in many different voltage configurations. The RN1406S\'s capacity to dissipate high voltages is due to its substantial collector to emitter breakdown voltage of 900V, which allows for the implementation of the transistor into higher voltage circuit designs.

The working principal of the RN1406S is designed to be incredibly straightforward. In a nutshell, the transistor takes an input signal and projects it out as an amplified output. This is made possible due to its hybrid nature as a pre-biased single bipolar transistor. More specifically, the transistor utilizes the sandwiched process of a single PNP transistor in parallel with a pre-biased NPN transistor, allowing for optimum performance and output through the hybrid approach.

Various application fields of the RN1406S make it an incredibly useful and useful tool in the design and manufacturing of a wide variety of component circuits, including but not limited to: power converters, device chargers, converters, switching power supplies, inverters and motor control systems.

In motor control systems, specifically, the RN1406S has proven it efficacy in usage across a variety of devices. Its broadband performance is also more advantageous, as it can maintain better performance and operation within the system, without having to worry about power dissipation or temperature drift. It also provides higher surge current, which allows for more stable, new designs for superior system performance.

The RN1406S is also commonly used in the automotive industry due to its reliability and durability. Its thermal stability and high voltage endurance makes it a great choice for use in the manufacture and implementation of vehicle engines, with its rugged construction also making it particularly resistant to external shock and vibration.

Whether being used in the automotive industry or for any other application, the RN1406S has clearly proven itself as an incredibly reliable and durable transistor, with its pre-biased approach proving both highly convenient and more efficient than many entrants onto the market. The simple-yet-effective working mechanism of the RN1406S, along with its efficiency, makes it an ideal choice for many circuit and component designs.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RN14" Included word is 40
Part Number Manufacturer Price Quantity Description
RN143-0.5-02-100M Schaffner EM... 1.87 $ 147 CMC 100MH 500MA 2LN TH100...
RN1406,LF Toshiba Semi... 0.03 $ 6000 TRANS PREBIAS NPN 0.2W S-...
RN1413(TE85L,F) Toshiba Semi... 0.02 $ 3000 TRANS PREBIAS NPN 0.2W SM...
RN1426TE85LF Toshiba Semi... 0.06 $ 1000 TRANS PREBIAS NPN 200MW S...
RN142-1.4-02-27M Schaffner EM... 1.89 $ 498 CMC 27MH 1.4A 2LN TH27mH ...
RN1418(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.2W S-...
RN1402S,LF Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.2W S-...
RN1401,LF Toshiba Semi... 0.03 $ 9000 TRANS PREBIAS NPN 0.2W S-...
RN1416,LF Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS NPN 0.2W S-...
RN1423TE85LF Toshiba Semi... 0.06 $ 1000 TRANS PREBIAS NPN 200MW S...
RN143-6-02-1M8 Schaffner EM... 2.04 $ 580 CMC 1.8MH 6A 2LN TH1.8mH ...
RN1422TE85LF Toshiba Semi... 0.06 $ 1000 TRANS PREBIAS NPN 200MW S...
RN1404S,LF Toshiba Semi... 0.03 $ 3000 TRANS PREBIAS NPN 0.2W S-...
RN143-4-02-3M9 Schaffner EM... 2.04 $ 145 CMC 3.9MH 4A 2LN TH3.9mH ...
RN1417(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.2W S-...
RN1409,LF Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS NPN 50V 0.2...
RN143-1-02-47M Schaffner EM... 2.0 $ 234 CMC 47MH 1A 2LN TH47mH @ ...
RN1442ATE85LF Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.2W S-...
RN142-1.4-02 Schaffner EM... 0.0 $ 1000 CMC 27MH 1.4A 2LN TH27mH ...
RN1427TE85LF Toshiba Semi... 0.08 $ 1000 TRANS PREBIAS NPN 200MW S...
RN143-6-02 Schaffner EM... 0.0 $ 1000 CMC 1.8MH 6A 2LN TH1.8mH ...
RN1402,LF Toshiba Semi... 0.03 $ 6000 TRANS PREBIAS NPN 0.2W S-...
RN142STE61 ROHM Semicon... -- 6000 DIODE PIN 60V 100MA EMD2 ...
RN142-0.5-02-82M Schaffner EM... 1.89 $ 186 CMC 82MH 500MA 2LN TH82mH...
RN143-2-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 10MH 2A...
RN142-6-02-1M8 Schaffner EM... 2.06 $ 1399 CMC 1.8MH 6A 2LN TH1.8mH ...
RN142-0.5-02 Schaffner EM... 0.0 $ 1000 CMC 82MH 500MA 2LN TH82mH...
RN141STE61 ROHM Semicon... -- 1000 DIODE FAST REC 50V 100MA ...
RN142ZS12ATE61 ROHM Semicon... 0.29 $ 1000 DIODE PIN HF SW 30V 50MA ...
RN142GT2R ROHM Semicon... -- 1000 PIN DIODE 60V 100MA VMD2R...
RN142VTE-17 ROHM Semicon... 0.06 $ 1000 DIODE PIN 60V UMDRF Diode...
RN142-2-02-6M8 Schaffner EM... 1.89 $ 200 CMC 6.8MH 2A 2LN TH6.8mH ...
RN142-4-02-3M3 Schaffner EM... 1.97 $ 200 CMC 3.3MH 4A 2LN TH3.3mH ...
RN142-4-02 Schaffner EM... 0.0 $ 1000 CMC 3.3MH 4A 2LN TH3.3mH ...
RN142-6-02 Schaffner EM... 3.2 $ 5 CMC 1.8MH 6A 2LN TH1.8mH ...
RN142-1-02 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 33MH 1A...
RN142-2-02 Schaffner EM... 0.0 $ 1000 CMC 6.8MH 2A 2LN TH6.8mH ...
RN142ZST2R ROHM Semicon... 0.05 $ 8000 DIODE PIN 30V 50MA GMD2RF...
RN141GT2R ROHM Semicon... 0.08 $ 1000 DIODE PIN HF SW 50V 100MA...
RN143-0.5-02 Schaffner EM... 0.0 $ 1000 CMC 100MH 500MA 2LN TH100...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics