RN1427TE85LF Allicdata Electronics
Allicdata Part #:

RN1427TE85LF-ND

Manufacturer Part#:

RN1427TE85LF

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 200MW SMINI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1427TE85LF datasheetRN1427TE85LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06985
Stock 1000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Base Part Number: RN142*
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 300MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 800mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RN1427TE85LF is a pre-biased single bipolar junction transistor (BJT). It is a type of transistor which is used to amplify an electrical signal, acting like a kind of switch which either allows or restricts flow of current. There are two different types of BJTs: n-type (NPN) and p-type (PNP). The RN1427TE85LF is an NPN type, meaning it has three leads: emitter, base, and collector. The emitter and collector are connected to a power supply, while the base receives a smaller current in order to control the flow of current between emitter and collector.

The RN1427TE85LF is used in a wide variety of applications, including audio amplifiers and power stages. It can also be used as a switch in power electronic circuits, providing a regulated output. Additionally, it can be used as an oscillator, as it has a fast response time and low power consumption.

The RN1427TE85LF has a wide variety of features which make it a popular choice in many applications. It is has a low saturation voltage, meaning it can operate with a low supply voltage, and is also able to handle high current. Furthermore, it has a high gain-bandwidth product and a high input impedance, allowing for efficient signal transfer. In addition, the low maximum junction temperature and low thermal resistance of the RN1427TE85LF provide an improved performance at high temperatures.

The working principle of the RN1427TE85LF is based on the fact that it is a pre-biased device. This means that the base-emitter junction is already forward biased before applying a signal, meaning that the transistor can be triggered with a much smaller signal. This makes the device ideal for applications where low power, high switching speed and efficient signal transfer are needed.

In order to understand the working principle of the RN1427TE85LF better, it is necessary to understand the operation of a typical NPN transistor. In an NPN transistor, the current flow is from the emitter to the collector. When the base-emitter junction is forward biased, it causes a current from the emitter to flow to the base, which in turn increases the current flowing from the base to the collector, this is referred to as the current gain. In the case of the RN1427TE85LF, it is already forward biased, so a much smaller current is required to trigger it (this is the pre-bias).

The RN1427TE85LF is a popular transistor in many applications due to its low cost, high gain, and low power consumption. It is ideal for use as an amplifier, switch or oscillator and is used in a wide variety of products including audio amplifiers, power stages, and power electronic products. As mentioned, its pre-bias feature makes it ideal for applications where low power, high switching speed and efficient signal transfer are needed.

The specific data is subject to PDF, and the above content is for reference

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