| Allicdata Part #: | RN1427TE85LF-ND |
| Manufacturer Part#: |
RN1427TE85LF |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 200MW SMINI |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | RN1427TE85LF Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.06985 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 100mA, 1V |
| Base Part Number: | RN142* |
| Supplier Device Package: | S-Mini |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type: | Surface Mount |
| Power - Max: | 200mW |
| Frequency - Transition: | 300MHz |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 50mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 10 kOhms |
| Resistor - Base (R1): | 2.2 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 800mA |
| Transistor Type: | NPN - Pre-Biased |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The RN1427TE85LF is a pre-biased single bipolar junction transistor (BJT). It is a type of transistor which is used to amplify an electrical signal, acting like a kind of switch which either allows or restricts flow of current. There are two different types of BJTs: n-type (NPN) and p-type (PNP). The RN1427TE85LF is an NPN type, meaning it has three leads: emitter, base, and collector. The emitter and collector are connected to a power supply, while the base receives a smaller current in order to control the flow of current between emitter and collector.
The RN1427TE85LF is used in a wide variety of applications, including audio amplifiers and power stages. It can also be used as a switch in power electronic circuits, providing a regulated output. Additionally, it can be used as an oscillator, as it has a fast response time and low power consumption.
The RN1427TE85LF has a wide variety of features which make it a popular choice in many applications. It is has a low saturation voltage, meaning it can operate with a low supply voltage, and is also able to handle high current. Furthermore, it has a high gain-bandwidth product and a high input impedance, allowing for efficient signal transfer. In addition, the low maximum junction temperature and low thermal resistance of the RN1427TE85LF provide an improved performance at high temperatures.
The working principle of the RN1427TE85LF is based on the fact that it is a pre-biased device. This means that the base-emitter junction is already forward biased before applying a signal, meaning that the transistor can be triggered with a much smaller signal. This makes the device ideal for applications where low power, high switching speed and efficient signal transfer are needed.
In order to understand the working principle of the RN1427TE85LF better, it is necessary to understand the operation of a typical NPN transistor. In an NPN transistor, the current flow is from the emitter to the collector. When the base-emitter junction is forward biased, it causes a current from the emitter to flow to the base, which in turn increases the current flowing from the base to the collector, this is referred to as the current gain. In the case of the RN1427TE85LF, it is already forward biased, so a much smaller current is required to trigger it (this is the pre-bias).
The RN1427TE85LF is a popular transistor in many applications due to its low cost, high gain, and low power consumption. It is ideal for use as an amplifier, switch or oscillator and is used in a wide variety of products including audio amplifiers, power stages, and power electronic products. As mentioned, its pre-bias feature makes it ideal for applications where low power, high switching speed and efficient signal transfer are needed.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RN1425TE85LF | Toshiba Semi... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
| RN142-1.4-02-27M | Schaffner EM... | 1.89 $ | 498 | CMC 27MH 1.4A 2LN TH27mH ... |
| RN1406S,LF(D | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.2W SM... |
| RN142-0.5-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 82MH 500MA 2LN TH82mH... |
| RN1412TE85LF | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.2W S-... |
| RN1417(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.2W S-... |
| RN1409,LF | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 50V 0.2... |
| RN143-1-02-47M | Schaffner EM... | 2.0 $ | 234 | CMC 47MH 1A 2LN TH47mH @ ... |
| RN1422TE85LF | Toshiba Semi... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
| RN141STE61 | ROHM Semicon... | -- | 1000 | DIODE FAST REC 50V 100MA ... |
| RN143-0.5-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 100MH 500MA 2LN TH100... |
| RN1416,LF | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.2W S-... |
| RN1423TE85LF | Toshiba Semi... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
| RN143-6-02-1M8 | Schaffner EM... | 2.04 $ | 580 | CMC 1.8MH 6A 2LN TH1.8mH ... |
| RN142-2-02-6M8 | Schaffner EM... | 1.89 $ | 200 | CMC 6.8MH 2A 2LN TH6.8mH ... |
| RN1426TE85LF | Toshiba Semi... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
| RN1402S,LF | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.2W S-... |
| RN142ZST2R | ROHM Semicon... | 0.05 $ | 8000 | DIODE PIN 30V 50MA GMD2RF... |
| RN1415(TE85L,F) | Toshiba Semi... | 0.05 $ | 3000 | TRANS PREBIAS NPN 0.2W S-... |
| RN143-4-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 3.9MH 4A 2LN TH3.9mH ... |
| RN143-0.5-02-100M | Schaffner EM... | 1.87 $ | 147 | CMC 100MH 500MA 2LN TH100... |
| RN1406,LF | Toshiba Semi... | 0.03 $ | 6000 | TRANS PREBIAS NPN 0.2W S-... |
| RN1413(TE85L,F) | Toshiba Semi... | 0.02 $ | 3000 | TRANS PREBIAS NPN 0.2W SM... |
| RN142STE61 | ROHM Semicon... | -- | 6000 | DIODE PIN 60V 100MA EMD2 ... |
| RN142-0.5-02-82M | Schaffner EM... | 1.89 $ | 186 | CMC 82MH 500MA 2LN TH82mH... |
| RN143-2-02 | Schaffner EM... | 0.0 $ | 1000 | COMMON MODE CHOKE 10MH 2A... |
| RN142-6-02-1M8 | Schaffner EM... | 2.06 $ | 1399 | CMC 1.8MH 6A 2LN TH1.8mH ... |
| RN142-4-02-3M3 | Schaffner EM... | 1.97 $ | 200 | CMC 3.3MH 4A 2LN TH3.3mH ... |
| RN1402,LF | Toshiba Semi... | 0.03 $ | 6000 | TRANS PREBIAS NPN 0.2W S-... |
| RN142ZS12ATE61 | ROHM Semicon... | 0.29 $ | 1000 | DIODE PIN HF SW 30V 50MA ... |
| RN142GT2R | ROHM Semicon... | -- | 1000 | PIN DIODE 60V 100MA VMD2R... |
| RN1404,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F S-MINI PLN (LF) ... |
| RN1408,LF(B | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 50V 0.2... |
| RN143-4-02-3M9 | Schaffner EM... | 2.04 $ | 145 | CMC 3.9MH 4A 2LN TH3.9mH ... |
| RN141GT2R | ROHM Semicon... | 0.08 $ | 1000 | DIODE PIN HF SW 50V 100MA... |
| RN1414,LF | Toshiba Semi... | 0.02 $ | 3000 | TRANS PREBIAS NPN 0.2W S-... |
| RN1427TE85LF | Toshiba Semi... | 0.08 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
| RN143-6-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 1.8MH 6A 2LN TH1.8mH ... |
| RN1442ATE85LF | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.2W S-... |
| RN1424TE85LF | Toshiba Semi... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
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RN1427TE85LF Datasheet/PDF