RN1416,LF Allicdata Electronics
Allicdata Part #:

RN1416LFTR-ND

Manufacturer Part#:

RN1416,LF

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.2W S-MINI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1416,LF datasheetRN1416,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02193
6000 +: $ 0.01978
15000 +: $ 0.01720
30000 +: $ 0.01548
75000 +: $ 0.01376
150000 +: $ 0.01147
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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The RN1416 and LF series of transistors are bipolar junction transistors that are single, pre-biased in nature and are manufactured by the Renesas corporation. The transistors offer a high-performance, low-power solution for a wide range of applications, from audio and power amplification, to small signal switching. They are also commonly used in consumer electronics to regulate voltage and current variations.

RN1416 and LF transistors offer different packages and have an impedance of 50 ohms. The collector-emitter voltage (VCE) range lies between 4.5-18V while the base-emitter voltage range lies between 0.7-1.5V. The maximum collector current tolerated lies between 0.2A-2A. The power dissipation of the transistor typically ranges between 200mW-800mW. The temperature range of operation of the transistor lies between -65C to +150C. The transistors have a maximum gain frequency of 10MHz-200MHz. The maximum time of fall is typically around 100ns.

The working principle of an RN1416 and LF transistor is generally the same as any other bipolar transistor and consists of two P-N junction diodes and a single homojunction region. The junction region acts as the control element for the transistor. In a common collector configuration, the base-emitter junction is forward-biased, causing current to flow from the emitter, through the base-emitter junction and into the base of the transistor. The current in the collector is controlled by the current through the base-emitter junction. Initially, this current will cause the collector current to be low, since the base-emitter junction will be leaky. However, as the current through the base-emitter junction increases, the collector current will also increase, which will in turn increases the collector current. The emitter-collector voltage is the main parameter that controls the current gain (hfe) of the transistor.

The RN1416 and LF series of transistors are used in a wide range of applications. They can be used as audio amplifiers, to amplify voltage at a low power requirement and are often used in oscillators to provide a frequency generation of around 10MHz-200Mbps. They are also used as switching elements for electronic circuits and provide high frequency current amplification for controlling the output of a circuit. Additionally, they are often used in power supplies and provide stable current regulation.

In summary, the RN1416 and LF series of transistors are single, pre-biased bipolar junction transistors that are manufactured by the Renesas Corporation. The transistors offer a high performance and low-power solution for a wide range of applications. The maximum gain frequency of the transistors is typically between 10MHz-20MHz, and the transistors offer voltage regulation rates of 0.2A-2A. The transistors are commonly used as amplifiers, switching elements, and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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