RN1418(TE85L,F) Discrete Semiconductor Products

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The RN1418 (TE85L, F) is an NPN silicon, pre-biased, single bipolar transistor intended for high speed, low noise amplifiers, low noise oscillators and other applications requiring low biasing current. The device is fabricated on a highly resistive silicon substrate to minimize device noise and to improve the thermal stability.

The RN1418 (TE85L, F) has a wide range of applications and is a versatile component for general purpose amplifier and high-speed switching and general-purpose applications. It is featured with an operating voltage range of 0-200 V and has a storage temperature range of −55 to 125 °C. The device is direct-bias capable, and offers fast switching and excellent stability. The device has a wide range of frequencies ranging from 10 kHz up to 1 GHz.

The RN1418 (TE85L, F) consists of two transistors―an NPN transistor and an FET. The NPN transistor has a hFE between 30-60, while the FET has an HFE between 5 and 50, depending on the particular transistor. The NPN transistor is designed to operate at voltage levels up to 200 volts and offers an HFE of between 5 and 40. The FET is designed to operate at voltage levels up to 60 volts and offers an HFE of between 5 and 50. The device is capable of delivering high gain, low noise and stability.

The working principle of the RN1418 (TE85L, F) is based on the principle of bipolar junction transistor (BJT). This is a three-terminal device having two semiconductor PN junctions which offer current flow between the collector and the emitter. The base-emitter junction in the middle is biased by an external current source, which provides the necessary base current to produce transistor action.

A BJT is a current-controlled device, meaning that the current flowing through the collector and emitter of the device is controlled by the current flowing through the base. This allows the device to amplify current, voltage and power. The emitter collector current (Ic) of the device can be expressed in terms of the base current (Ib) as: Ic = HFE * Ib, where HFE is the current gain of the device. The current gain (also known as the β factor) is the ratio of the collector current (Ic) to the base current (Ib).

In the RN1418 (TE85L, F), the anti-saturation technique is used to provide low bias current and reduced distortion. This technique involves connecting the base-emitter junction of the NPN transistor to the source terminal of the FET. The FET senses the base current and adjusts it to maintain a constant voltage across the collector and emitter of the BJT.

The RN1418 (TE85L, F) is a low-noise and fast switching device, ideal for use in low power, low noise amplifiers and other circuits requiring low biasing current. The device has features like wide frequency response, low noise, fast switching, high gain and excellent stability.

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