RN1402S,LF Allicdata Electronics

RN1402S,LF Discrete Semiconductor Products

Allicdata Part #:

RN1402SLFTR-ND

Manufacturer Part#:

RN1402S,LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.2W S-MINI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1402S,LF datasheetRN1402S,LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Base Part Number: RN140*
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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RN1402S is an NPN silicon pre-biased transistor with excellent performance, low voltage, and high current and wide range of applications.

RN1402S is commonly used in relatively low frequency (LF) applications. In LF applications, the NPN transistor is used as an on-off switch, controlling the flow of current with no varying current values. It is also used in the audio frequency region (20 to 20KHz), often as an amplifier.

RN1402S is a single, pre-biased bipolar junction transistor (BJT). The pre-biased states of the transistor ensures that, when the transistor is switched on, a certain level of current will flow through the collector-emitter of the transistor - the amount of current being determined by the pre-biased setting. This also provides an advantage in that the current flow can be easily adjusted without the need for a current-set resistor.

RN1402S uses the principle of electron pair injection to control the flow of current from the base to the collector. Electron pairs from the base region of the transistor are injected into the collector region, controlling the current flow. The electron pairs are collected by the collector and returned through the emitter, regulating the amount of current passing through the collector-emitter of the transistor.

Because the RN1402S is a pre-biased transistor, relatively low power (5V) is needed to actuate the transistor. The base current of the transistor is regulated so that the collector voltage is maintained at a certain level, regardless of variations in the collector current. This feature ensures a stable operation and improved efficiency.

RN1402S can be used in a wide range of LF applications, such as amplifiers, switches, and various other linear circuits. The pre-biased transistor offers stability, aiding in noise reduction, while also providing superior voltage output and current gain.

In summary, the RN1402S is a single, pre-biased NPN silicon transistor with excellent performance, low voltage, and high current. It is commonly used in LF applications as an on-off switch or audio frequency amplifiers. Its pre-biased setting ensures that a certain level of current will flow through the collector-emitter, and its relatively low power requirements make it convenient to use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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