| Allicdata Part #: | RN1423TE85LF-ND |
| Manufacturer Part#: |
RN1423TE85LF |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 200MW SMINI |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  RN1423TE85LF Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.05954 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 100mA, 1V |
| Base Part Number: | RN142* |
| Supplier Device Package: | S-Mini |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type: | Surface Mount |
| Power - Max: | 200mW |
| Frequency - Transition: | 300MHz |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 50mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 4.7 kOhms |
| Resistor - Base (R1): | 4.7 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 800mA |
| Transistor Type: | NPN - Pre-Biased |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The RN1423TE85LF transistor has a variety of applications and is applicable in low voltage, high frequency ops. Pre-biased, it is especially useful for applications where significant bias conditions are present in order to achieve the desired parameters. Here, we will discuss the RN1423TE85LF’s application field and its working principle.
Application field
The RN1423TE85LF is considered to be an efficient, small signal NPN transistor and is typically used in electronic circuits demanding small input and output signals. It can handle operating currents of up to 100mA, with a maximum power dissipation of 600 mW. As a single pre-biased transistor, it is used in applications where signals need to be regulated, amplified and distorted.It is used in a wide range of applications such as low-noise amplifiers, voltage regulators, power supplies, pulse circuits and linear amplifiers. Further, it is often used as a mixer and oscillator in various radio frequency and microwave circuits. It can also be used as a photoelectric transistor, making it particularly suitable for use in bias analysis and photovoltaic cells.
Working Principle
RN1423TE85LF is an NPN pre-biased small signal transistor, which means that it has a pre-fixed voltage applied across its base-emitter junction. This results in a constant current flowing through the transistor even in the absence of a signal, which allows for higher gain, lower noise and increased linearity.The RN1423TE85LF works by creating a coupling capacitor between the signal source and the transistor. The capacitor acts like a gate, allowing the signal through while blocking out any DC bias or DC component of the signal. Since the signal is coupled directly to the transistor base, the two signals become linked. This link allows the signal to be amplified by varying the base current, which in turn varies the collector current; the amplified signal is then outputted at the transistor\'s collector. This biasing also helps to regulate the current entering the transistor and the voltage present across the collector-emitter junction. This helps to maintain efficient operations without any loss of power.The RN1423TE85LF also prevents thermal runaway and reverse bias protection which occurs when an excessive voltage is applied, leading to an increase in the current and an increase in the transistor’s power dissipation. As a result, the RN1423TE85LF helps to protect the circuit against possible damage due to excessive current.
Conclusion
RN1423TE85LF is an NPN pre-biased small signal transistor, used in a wide range of applications such as low-noise amplifiers, voltage regulators, power supplies, pulse circuits and linear amplifiers. Its pre-biased nature helps to regulate the current entering the transistor and the voltage present across the collector-emitter junction, enabling efficient operations without any loss of power. Additionally, its coupling capacitor ensures that the signal is only allowed through without any bias or DC component, allowing for increased gain and linearity.
The specific data is subject to PDF, and the above content is for reference
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