RN1415(TE85L,F)

Resistor - Emitter Base (R2):	10 kOhms
Supplier Device Package:	S-Mini
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 5V
Series:	--
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Theme：RN1415(TE85L,F) application field and working principleCategory: Transistors - Bipolar (BJT) - Single, Pre-Biased Applied in small signal circuits, RN1415(TE85L,F) is a generally used NPN bipolar junction transistor that has pre-loaded characteristics for more efficient operation. Constructed with a Si-N system and featuring characteristics such as low input noise, high switching frequency and low quiescent current, this pre-biased device is commonly employed in electronic circuits of many different applications, from audio amplifiers and A/D converters to wireless radio transceivers. Working principle-wise, this device operates through the direct control of an electric current by a base current. Its switching current is typically in the range of a few micro-Amperes and the operating temperature of this device could range from -55℃ and 150℃. The base-emitter junction of this device typically has a threshold voltage of 0.7 volts. This in turn allows the reference voltage connected to the base of the transistor to be very small resulting in a very low voltage drop across the device.Basically, just like any other NPN transistor, the RN1415(TE85L,F) has three terminals: the emitter (E), the collector (C) and the base (B). The base is used to control the conductivity of the device and is connected to external circuitry in order to control the flow of current between the emitter and the collector. The collector, being the higher voltage (or, in reverse case, source) terminal, is connected to a positive voltage source and the emitter is connected to a negative voltage source. Depending on the controlling signal, the RN1415(TE85L,F) can operate in one of the two possibilities: either as a switch where the collector current is blocked and then let through or as an amplifier where the current is increased in order to increase the output current. Its very low input current makes it especially suitable for current amplification and switching purposes in small signal circuit applications, making it the prefect choice for audio amplifiers, A/D converters, radio and RF transceivers, etc. In terms of usage and practicality, the RN1415(TE85L,F) transistor is simple and straightforward to use. It can easily be connected to any external circuitry and utilized as a current or voltage amplifier. This type of transistor is also highly reliable and is equipped with a long operational lifetime. Moreover, when acoustically coupled with other components, its switching frequency could be as high as 1MHz.To sum it up, the RN1415(TE85L,F) is an efficient and reliable pre-biased NPN transistor that is suitable for both current and voltage amplifications. With advanced characteristics such as low input noise, low quiescent current, high switching frequency and low energy consumption, this device is commonly employed for many small signal circuit applications, ranging from audio amplifiers and A/D converters to wireless radio transceivers.

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