Allicdata Part #: | RN1441ATE85LFTR-ND |
Manufacturer Part#: |
RN1441ATE85LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.2W S-MINI |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1441ATE85LF Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.03651 |
Resistor - Base (R1): | 5.6 kOhms |
Supplier Device Package: | S-Mini |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 30MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 4mA, 2V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Current - Collector (Ic) (Max): | 300mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The RN1441ATE85LF is a single, pre-biased, bipolar transistor engineered for use in industrial and automotive applications. The device utilizes a Darlington configuration, which combines two BJT transistors in series with a common emitter base voltage, to obtain higher current gain. This device can be used to reduce the power consumption in a circuit while still achieving the desired performance.
In automotive applications, the RN1441ATE85LF can be used to control the opening and closing of a vehicle door. It could be utilized as a part of an electronic door lock system. The device can act as a switch in the electrical circuit that allows the door lock to be opened or closed when the corresponding button is pressed. Additionally, the device can be used to detect the presence of a button being pressed. When activated, it will put the circuit into an active state, thus allowing the other components of the circuit to operate.
The bipolar junction transistor or BJT device contained in the RN1441ATE85LF can be thought of as a current amplifier. As the current applied to the device increases, the voltage of the output signal also increases. This allows for precise control of the output signal. By adjusting the base voltage, the current gain can be tailored to specific requirements, which can reduce power consumption. In addition, the device is pre-biased, which means that the base and emitter voltages are already predetermined. This reduces the need for external bias components, which would otherwise be necessary for circuit design.
The RN1441ATE85LF also offers a wide operating temperature range, making it suitable for use in environments that may be exposed to extreme temperatures. It has an operating temperature range of -40°C to +125°C, which means that it can handle higher temperatures than some other devices. Additionally, it has a relatively high current gain, with a typical gain of 2000. This, combined with the pre-biased configuration, makes the device appropriate for most automotive applications.
Overall, the RN1441ATE85LF is a single pre-biased bipolar transistor suitable for industrial and automotive applications. It features a Darlington configuration, making it capable of producing higher current gain than a single BJT. Additionally, it is pre-biased and equipped with a wide temperature range, making it suitable for use in temperature extremes. Finally, it is relatively low-power, helping to reduce power consumption while still achieving desired results.
The specific data is subject to PDF, and the above content is for reference
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