RN1403,LF

Series:	--
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	S-Mini

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Introduction

RN1403 is a Single Pre-Biased Bipolar Junction Transistor (BJT). It is a semiconductor device that consists of two p-n junctions, one in the base and one in the emitter. The device has a low voltage gain, low noise and low power consumption characteristics. It is used in a variety of applications such as radio transmitters and receivers, digital circuits and biomedical devices.

Application Field

RN1403 can be used in many applications because of its electrical characteristics. It can be used in the following applications: 1. Radio receivers: The RN1403 can be used as an RF amplifier in a radio receiver circuit. It has low voltage gain, low noise and low power consumption characteristics, making it suitable for radio receivers.2. Digital circuits: It can be used as an amplifier in digital circuits to amplify the input signals. 3. Biomedical devices: The RN1403 can be used as an amplifier in biomedical devices such as pacemakers, hearing aids and medical imaging devices. 4. Audio devices: It can be used as an amplifier in audio devices such as amplifiers, speakers and headphones.

Working Principle

RN1403 is a type of BJT. It works on the principle of minority carrier injection. The device consists of two p-n junctions connected in series. The base-emitter junction is forward biased, whereas the base-collector junction is reverse biased. The base-emitter junction acts as a diode, allowing majority carriers from the emitter to flow to the base. The reverse biased base-collector junction prevents the majority carriers from flowing back to the emitter. Minority carriers are injected into the base region under the action of the electric field created by the applied voltage. These minority carriers then get easily attracted to the collector due to the surface potential barrier formed due to the reverse biasing of the base-collector junction. This current is called the collector current and this is how the RN1403 amplifies signals.

Conclusion

RN1403 is a Single Pre-Biased Bipolar Junction Transistor (BJT). It is used in many applications, including radio receivers, digital circuits and biomedical devices. It works on the principle of minority carrier injection. This involves the forward biasing of the base-emitter junction and the reverse biasing of the base-collector junction to inject minority carriers into the base region. These minority carriers then get attracted to the collector, which generates the collector current and amplifies the input signal.

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