RN2106(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN2106(T5LFT)TR-ND

Manufacturer Part#:

RN2106(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W SSM
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2106(T5L,F,T) datasheetRN2106(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN2106 (T5L,F,T) is a single, pre-biased transistor. It is mainly used in applications that require a high current and excellent control between two circuits. This device uses a bipolar junction transistor (BJT) to switch between the two circuits. It is a widely-used transistor for many industrial and consumer applications.

A bipolar junction transistor (BJT) is an active type of transistor. It consists of two diodes connected together, forming a junction in the middle. BJTs are commonly used in both digital and analog circuits because of their superior performance compared to other types of transistors. They enable greater control of variation in the output current, which is important in many applications.

The RN2106 (T5L,F,T) is a prime example of a BJT-based pre-biased single transistor. These types of transistors are particularly useful in applications that require two circuits to be connected while bypassing distortion and providing accurate current effects that are controlled by a single output. This device is typically used in amplifier and oscillator circuits and provides excellent performance. It also has the capability to maintain a steady voltage across the two circuits, and it supports boosts in duty cycles up to 50%.

The working principle of the RN2106 (T5L,F,T) is quite simple. It works by creating a depletion region within the base-collector junction of the transistor. This depletion region is larger as the transistor is further biased, creating a larger barrier when the transistor is in its operating mode. As the voltage across the base-collector junction exceeds the reverse bias breakdown voltage of the transistor, a current is passed from the collector to the emitter, thus controlling the current flow between the two circuits.

The RN2106 (T5L,F,T) provides excellent performance and is used in many industrial and consumer applications. It features a breakdown voltage range between 20V and 100V, a current gain of 0.80 to 0.90, an excellent surge capability, and an operating temperature range of -40°C to 125°C. This transistor is also offered with a wide range of packages and configurations, making it the ideal choice for any application that requires a single, pre-biased transistor.

In summary, the RN2106 (T5L,F,T) is a single, pre-biased transistor that is mainly used in applications that require a high current and excellent control between two circuits. It uses a bipolar junction transistor (BJT) to switch between the two circuits, providing excellent performance and superior control. Its working principle is based on the creation of a depletion region within the base-collector junction, which is larger as the transistor is further biased. This device provides a wide range of features, making it the perfect choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RN21" Included word is 40
Part Number Manufacturer Price Quantity Description
RN218-1-02-22M Schaffner EM... 1.46 $ 500 CMC 22MH 1A 2LN TH22mH @ ...
RN214-0.3-02 Schaffner EM... 1.97 $ 144 CMC 47MH 300MA 2LN TH47mH...
RN2114MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN214-2-02-2M2 Schaffner EM... 1.25 $ 459 CMC 2.2MH 2A 2LN TH2.2mH ...
RN214-1.5-02 Schaffner EM... 1.87 $ 900 CMC 6.8MH 1.5A 2LN TH6.8m...
RN2112,LF(CT Toshiba Semi... 0.03 $ 3000 TRANS PREBIAS PNP 50V 0.1...
RN2112CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN2101ACT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W CS...
RN2111CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN216-1-02-10M Schaffner EM... 1.5 $ 481 CMC 10MH 1A 2LN TH10mH @ ...
RN2117MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN2106CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN2104MFV,L3F Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 50V 500...
RN2103MFV,L3F Toshiba Semi... 0.0 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN212-0.4-02 Schaffner EM... 0.0 $ 1000 CMC 39MH 400MA 2LN TH39mH...
RN2115MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN2130MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN2107CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN212-3.6-02-0M4 Schaffner EM... 1.23 $ 491 CMC 400UH 3.6A 2LN TH400H...
RN216-0.5-02-27M Schaffner EM... 1.5 $ 500 CMC 27MH 500MA 2LN TH27mH...
RN214-0.3-02-47M Schaffner EM... 1.25 $ 473 CMC 47MH 300MA 2LN TH47mH...
RN2101,LF(CT Toshiba Semi... 0.03 $ 6000 TRANS PREBIAS PNP 0.1W SS...
RN212-0.8-02 Schaffner EM... 0.0 $ 1000 CMC 10MH 800MA 2LN TH10mH...
RN2109ACT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W CS...
RN2115,LF(CB Toshiba Semi... 0.03 $ 1000 TRANS PREBIAS PNP 50V 0.1...
E3FB-RN21 Omron Automa... 64.61 $ 5 SENSOR PHOTO RETRO METAL ...
RN214-0.5-02-56 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 56MH 50...
RN21-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MODULE BLUETOOTH
RN2110MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN218-1.1-02-15M Schaffner EM... 1.46 $ 500 CMC 15MH 1.1A 2LN TH15mH ...
RN2111MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN212-1.2-02 Schaffner EM... 0.0 $ 1000 CMC 6.8MH 1.2A 2LN TH6.8m...
RN2113ACT(TPL3) Toshiba Semi... 0.04 $ 10000 TRANS PREBIAS PNP 0.1W CS...
RN2105ACT(TPL3) Toshiba Semi... 0.04 $ 10000 TRANS PREBIAS PNP 0.1W CS...
RN216-0.8-02-27M Schaffner EM... 1.5 $ 495 CMC 27MH 800MA 2LN TH27mH...
RN2110CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN212-0.5-02-27M Schaffner EM... 1.23 $ 515 CMC 27MH 500MA 2LN TH27mH...
RN212-1.5-02 Schaffner EM... 0.0 $ 1000 CMC 3.3MH 1.5A 2LN TH3.3m...
RN214-1.2-02 Schaffner EM... 0.0 $ 1000 CMC 10MH 1.2A 2LN TH10mH ...
RN214-2-02 Schaffner EM... 0.0 $ 1000 CMC 4.2MH 2A 2LN TH4.2mH ...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics