| Allicdata Part #: | RN2106(T5LFT)TR-ND |
| Manufacturer Part#: |
RN2106(T5L,F,T) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.1W SSM |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | RN2106(T5L,F,T) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 200MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SSM |
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The RN2106 (T5L,F,T) is a single, pre-biased transistor. It is mainly used in applications that require a high current and excellent control between two circuits. This device uses a bipolar junction transistor (BJT) to switch between the two circuits. It is a widely-used transistor for many industrial and consumer applications.
A bipolar junction transistor (BJT) is an active type of transistor. It consists of two diodes connected together, forming a junction in the middle. BJTs are commonly used in both digital and analog circuits because of their superior performance compared to other types of transistors. They enable greater control of variation in the output current, which is important in many applications.
The RN2106 (T5L,F,T) is a prime example of a BJT-based pre-biased single transistor. These types of transistors are particularly useful in applications that require two circuits to be connected while bypassing distortion and providing accurate current effects that are controlled by a single output. This device is typically used in amplifier and oscillator circuits and provides excellent performance. It also has the capability to maintain a steady voltage across the two circuits, and it supports boosts in duty cycles up to 50%.
The working principle of the RN2106 (T5L,F,T) is quite simple. It works by creating a depletion region within the base-collector junction of the transistor. This depletion region is larger as the transistor is further biased, creating a larger barrier when the transistor is in its operating mode. As the voltage across the base-collector junction exceeds the reverse bias breakdown voltage of the transistor, a current is passed from the collector to the emitter, thus controlling the current flow between the two circuits.
The RN2106 (T5L,F,T) provides excellent performance and is used in many industrial and consumer applications. It features a breakdown voltage range between 20V and 100V, a current gain of 0.80 to 0.90, an excellent surge capability, and an operating temperature range of -40°C to 125°C. This transistor is also offered with a wide range of packages and configurations, making it the ideal choice for any application that requires a single, pre-biased transistor.
In summary, the RN2106 (T5L,F,T) is a single, pre-biased transistor that is mainly used in applications that require a high current and excellent control between two circuits. It uses a bipolar junction transistor (BJT) to switch between the two circuits, providing excellent performance and superior control. Its working principle is based on the creation of a depletion region within the base-collector junction, which is larger as the transistor is further biased. This device provides a wide range of features, making it the perfect choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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RN2106(T5L,F,T) Datasheet/PDF