RN2107ACT(TPL3) Discrete Semiconductor Products |
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| Allicdata Part #: | RN2107ACT(TPL3)TR-ND |
| Manufacturer Part#: |
RN2107ACT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.1W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | RN2107ACT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
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The RN2107ACT (TPL3) is a single, pre-biased, bipolar junction transistor (BJT) designed for use in a wide variety of applications in the industrial and automotive markets. This particular type of BJT provides a low-cost solution for improved performance and reliability when compared to other basic BJTs, allowing for a more efficient design.
The RN2107ACT (TPL3) is a direct-coupled, common-emitter transistor that is used mainly in audio oscillator and amplifier circuits. This BJT provides an improved output voltage and current, with good frequency response and excellent linearity, compared to other production-level BJTs. This makes it ideal for use in audio amplifiers and high performance circuits, as well as other applications.
The RN2107ACT (TPL3) consists of two PN junctions and two bipolar regions, with a collector and emitter junction. The transistor is operational when current is allowed to pass through the emitter junction, which will produce a collector current that is larger than the emitter current. The current in the collector and the emitter junction is regulated by the base-emitter voltage, which is set externally by the user. Furthermore, a single, pre-biased BJT has the ability to provide a stable operation, even under extreme operating conditions.
The RN2107ACT (TPL3) can be used as a switch and as an amplifier, and can also be used in power regulation and current monitoring circuits. Its ability to provide a reliable performance and excellent frequency response makes it well suited for audio applications, as well as power management circuits and LED drivers. Additionally, this transistor has the ability to withstand high temperature levels and can withstand up to 150°C in some cases, making it suitable for harsh operating environments.
The single, pre-biased BJT also offers several advantages when compared to other types of BJT, including a low-power consumption and low noise emission. This makes it suitable for low-noise and low-power circuits, as well as other applications that require precise control. Furthermore, due to the single, pre-biased design, the RN2107ACT (TPL3) can be used as a switching element without the need for additional components, which makes it easier to integrate into existing designs.
In summary, the RN2107ACT (TPL3) is a highly efficient and reliable single, pre-biased BJT. Its ability to provide a high current and excellent frequency response, combined with its low-power consumption and low noise emission, makes it ideal for use in a wide range of applications, from audio amplifiers to current monitoring circuits. Additionally, its single, pre-biased design allows it to be used as a switching element without the need for additional components, making it easy to integrate into existing designs. Thus, the RN2107ACT (TPL3) is the perfect solution for improving performance and reliability in a range of industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| RN2103(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.1W SS... |
| E3RA-RN21 | Omron Automa... | 67.19 $ | 3 | SENSOR PHOTO RETRO 3M NPN... |
| RN2107ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.1W CS... |
| E3FA-RN21 | Omron Automa... | 53.27 $ | 6 | SENSOR PHOTO RETRO STRAIG... |
| RN214-1.2-02-10M | Schaffner EM... | 1.25 $ | 836 | CMC 10MH 1.2A 2LN TH10mH ... |
| RN212-0.4-02-27M | Schaffner EM... | 1.23 $ | 490 | CMC 27MH 400MA 2LN TH27mH... |
| RN218-0.4-02-100M | Schaffner EM... | 1.46 $ | 500 | CMC 100MH 400MA 2LN TH100... |
| RN212-2-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 1.8MH 2A 2LN TH1.8mH ... |
| RN2107MFV,L3F | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPNPre-Bias... |
| RN214-4-02-1M5 | Schaffner EM... | 1.3 $ | 12927 | CMC 1.5MH 4A 2LN TH1.5mH ... |
| RN218-0.7-02-39M | Schaffner EM... | 1.46 $ | 500 | CMC 39MH 700MA 2LN TH39mH... |
| RN212-0.6-02 | Schaffner EM... | 1.76 $ | 183 | CMC 15MH 600MA 2LN TH15mH... |
| RN212-1.5-02-3M3 | Schaffner EM... | 1.23 $ | 1695 | CMC 3.3MH 1.5A 2LN TH3.3m... |
| RN2103CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.05W C... |
| RN216-0.5-02-39M | Schaffner EM... | 1.5 $ | 500 | CMC 39MH 500MA 2LN TH39mH... |
| RN2107,LF(CB | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS PNP 50V 0.1... |
| RN2109MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN2105MFV,L3F | Toshiba Semi... | 0.0 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN214-2-02-4M2 | Schaffner EM... | 1.25 $ | 2573 | CMC 4.2MH 2A 2LN TH4.2mH ... |
| RN212-0.6-02-15M | Schaffner EM... | 1.23 $ | 2144 | CMC 15MH 600MA 2LN TH15mH... |
| RN2130MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN2107CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.05W C... |
| RN2111MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN21-I/RM | Microchip Te... | 0.0 $ | 1000 | RF TXRX MODULE BLUETOOTH |
| RN216-0.8-02-27M | Schaffner EM... | 1.5 $ | 495 | CMC 27MH 800MA 2LN TH27mH... |
| RN2105ACT(TPL3) | Toshiba Semi... | 0.04 $ | 10000 | TRANS PREBIAS PNP 0.1W CS... |
| RN212-0.8-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 10MH 800MA 2LN TH10mH... |
| RN212-0.5-02-15M | Schaffner EM... | 1.23 $ | 221 | CMC 15MH 500MA 2LN TH15mH... |
| RN216-1.7-02-4M0 | Schaffner EM... | 1.5 $ | 354 | CMC 4MH 1.7A 2LN TH4mH @ ... |
| RN2104ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.1W CS... |
| RN214-3-02-2M0 | Schaffner EM... | 1.3 $ | 909 | CMC 2MH 3A 2LN TH2mH @ 10... |
| RN214-0.3-02-47M | Schaffner EM... | 1.25 $ | 473 | CMC 47MH 300MA 2LN TH47mH... |
| RN2101,LF(CT | Toshiba Semi... | 0.03 $ | 6000 | TRANS PREBIAS PNP 0.1W SS... |
| RN2114MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN218-1-02-22M | Schaffner EM... | 1.46 $ | 500 | CMC 22MH 1A 2LN TH22mH @ ... |
| RN214-0.3-02 | Schaffner EM... | 1.97 $ | 144 | CMC 47MH 300MA 2LN TH47mH... |
| RN2101ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.1W CS... |
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RN2107ACT(TPL3) Datasheet/PDF