RN2107ACT(TPL3) Allicdata Electronics

RN2107ACT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

RN2107ACT(TPL3)TR-ND

Manufacturer Part#:

RN2107ACT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2107ACT(TPL3) datasheetRN2107ACT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The RN2107ACT (TPL3) is a single, pre-biased, bipolar junction transistor (BJT) designed for use in a wide variety of applications in the industrial and automotive markets. This particular type of BJT provides a low-cost solution for improved performance and reliability when compared to other basic BJTs, allowing for a more efficient design.

The RN2107ACT (TPL3) is a direct-coupled, common-emitter transistor that is used mainly in audio oscillator and amplifier circuits. This BJT provides an improved output voltage and current, with good frequency response and excellent linearity, compared to other production-level BJTs. This makes it ideal for use in audio amplifiers and high performance circuits, as well as other applications.

The RN2107ACT (TPL3) consists of two PN junctions and two bipolar regions, with a collector and emitter junction. The transistor is operational when current is allowed to pass through the emitter junction, which will produce a collector current that is larger than the emitter current. The current in the collector and the emitter junction is regulated by the base-emitter voltage, which is set externally by the user. Furthermore, a single, pre-biased BJT has the ability to provide a stable operation, even under extreme operating conditions.

The RN2107ACT (TPL3) can be used as a switch and as an amplifier, and can also be used in power regulation and current monitoring circuits. Its ability to provide a reliable performance and excellent frequency response makes it well suited for audio applications, as well as power management circuits and LED drivers. Additionally, this transistor has the ability to withstand high temperature levels and can withstand up to 150°C in some cases, making it suitable for harsh operating environments.

The single, pre-biased BJT also offers several advantages when compared to other types of BJT, including a low-power consumption and low noise emission. This makes it suitable for low-noise and low-power circuits, as well as other applications that require precise control. Furthermore, due to the single, pre-biased design, the RN2107ACT (TPL3) can be used as a switching element without the need for additional components, which makes it easier to integrate into existing designs.

In summary, the RN2107ACT (TPL3) is a highly efficient and reliable single, pre-biased BJT. Its ability to provide a high current and excellent frequency response, combined with its low-power consumption and low noise emission, makes it ideal for use in a wide range of applications, from audio amplifiers to current monitoring circuits. Additionally, its single, pre-biased design allows it to be used as a switching element without the need for additional components, making it easy to integrate into existing designs. Thus, the RN2107ACT (TPL3) is the perfect solution for improving performance and reliability in a range of industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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