RP1E070XNTCR Discrete Semiconductor Products

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The RP1E070XNTCR is a single N-channel enhancement mode field effect transistor (FET). It is a type of power transistor suitable for general purpose applications.

A FET is a type of transistor, or solid-state switch, that works by using an electric field to control a current flow in a semiconductor material. It is one of the simplest and most widely used transistors for electrical power applications, as it can switch large currents with high efficiency and is relatively inexpensive.

The RP1E070XNTCR is a 70V FET and is specified for high-efficiency use in heavy-duty switching, such as in a power supply or motor drive circuits.

It has a drain-source on resistance of 140 mΩ (max) at 10V and a maximum Id of 400mA. It also has a high-speed switching capability of 1.2 nsec, making it ideal for use in high-speed applications. Its maximum breakdown voltage is 80V, with an avalanche energy rating of 325 mJ.

Additionally, the RP1E070XNTCR has a gate-source capacitance of 0.8 pF, which allows it to be used in high-speed applications such as in computer circuitry and telecom circuits.

The working principle of the RP1E070XNTCR is fairly simple. It works by using a voltage applied to its gate, which creates an electric field in the channel between the source and the drain. This electric field then controls the current flow in the semiconductor material. Depending on what type of device is connected to the source and the drain, a FET can be used for either amplification or switching.

In the case of the RP1E070XNTCR, it is used as a switching transistor, which means that it can be used to turn on and off an external circuit. When the gate voltage is low (0V or lower), the FET is off and does not allow current flow. When the gate voltage is high (relative to the source voltage), the FET is on and allows current flow. This is the same basic principle used in most electronic power supplies.

With its high on/off resistance, fast switching time, and low gate capacitance, the RP1E070XNTCR transistor is suitable for a wide range of applications. It is used in power supplies and buck converters, power-on reset circuits, 6Gb/s line drivers, motor drive circuits, automotive sensors, and other DC/DC converters.

It is also suitable for a range of industrial applications, such as battery chargers, UPS systems, and industrial motor control. It is also used in telecom power amplifiers and line driver circuits, as well as body electronic devices such as airbags, windscreen wipers, door locks, and antenna systems.

In summary, the RP1E070XNTCR is a single N-channel enhancement mode FET suitable for general purpose applications. It has a high on/off resistance, fast switching time, and low gate capacitance, making it suitable for use in a range of high-speed power, industrial, and telecommunications applications. By using an electric field to control the current flow in a semiconductor material, the RP1E070XNTCR FET can be used for both amplification and switching purposes.

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