RP1E100XNTR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	MPT6
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	13 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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RP1E100XNTR Application Field and Working Principle

The RP1E100XNTR is a special type of transistor that falls within the family of metal-oxide semiconductor field effect transistors, or MOSFETs, which are single-gate transistors. It is ideally suited for a variety of industrial applications, owing to its unique features and architecturally sound design. The RP1E100XNTR is a N-Channel enhancement-mode type of transistor. This type of transistor works by controlling the current flow between source and drain terminals by modulating voltage on the gate terminal. This helps control the on/off of the transistor, depending upon how a particular circuit is arranged, allowing for efficient control of power delivery and energy management.The architecture behind the RP1E100XNTR is designed to allow for both enhanced performance in existing power delivery systems, as well as to assist engineers in quickly designing new ones. This is done via the use of parallel-gate and back-gate switches, which helps reduce gate-lag and gate-leakage. This makes the transistor much more efficient than conventional transistors, both in terms of power and current control. Additionally, this type of transistor also has lower self-heating, meaning that it emits less heat and temperature thereby resulting in better thermal stability. The RP1E100XNTR is also well-suited for a variety of industrial applications. It features a wide operating temperature range, ranging from -40?C to +150?C, making it suitable for use in applications where temperatures can get extremely high, such as in industrial machinery or in automotive components. Additionally, this type of transistor is also resistant to electrostatic discharges, making it a great choice for environments where static electricity can be a concern. Furthermore, the RP1E100XNTR also features a lower gate-capacitance than other MOSFETs in its class, making it a great choice for applications which are sensitive to additional power consumption. Overall, the RP1E100XNTR is a great choice for a variety of industrial applications. Its architecture helps in the quick design of new power delivery systems, while its wide temperature range and ESD-resistance make it suitable for use in extreme environments. Furthermore, its low gate-capacitance also helps in keeping power consumption down. Thus, it is a great choice for all sorts of industrial applications.

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