RP1E125XNTR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	MPT6
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1000pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12.7nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	12 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	12.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The RP1E125XNTR is a single n-channel enhancement type, MOSFET transistor. It is suitable for a variety of applications, such as power circuits, analog switches, and digital circuits. This transistor provides high-speed switching, low on-resistance, and low capacitance.

Application Field

The RP1E125XNTR can be applied in a number of areas. It is most commonly used in high-frequency switching applications. This transistor can be used to drive a wide range of power circuits, such as dc/dc converters and adjustable power supplies. It is also used in analog switches and digital circuits, as well as power transistor applications.The RP1E125XNTR has a wide range of features that make it suitable for a variety of applications. It has high-speed switching, low on-resistance, and low capacitance. It also has an antenna gate voltage of 4V and a junction-to-case thermal resistance of 0.8 ⌀CW. In addition, this transistor is RoHS compliant, reducing environmental impact.

Working Principle

The RP1E125XNTR is a metal-oxide semiconductor field-effect transistor (MOSFET). It is constructed with a silico n gate, drain, and source terminals. A metal gate electrode is connected to the gate terminal. When a voltage is applied to the gate, an electric field is then created, allowing electrons to flow across the channel and between the drain and source terminals. This is known as the transistor’s “on” state, which allows current to flow through the transistor. To turn the transistor “off”, the voltage is reduced or removed, making the channel spillage current too low to maintain flow.The RP1E125XNTR has a number of characteristics that make it ideal for high-frequency switching applications. It has low gate charge and low output capacitance, which results in faster switching times. Its output saturation, on-resistance, and off-state leakage all have low values for superior performance.

Conclusion

The RP1E125XNTR is a single n-channel enhancement type, MOSFET transistor. It is suitable for a variety of applications, including high-frequency switching, dc/dc converters, adjustable power supplies, analog switches, and digital circuits. This transistor has a number of features, such as high-speed switching, low on-resistance, and low output capacitance, that make it ideal for high-frequency switching applications. The RP1E125XNTR is also RoHS compliant, making it an environmentally friendly choice.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description