RP1E090RPTR Discrete Semiconductor Products |
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Allicdata Part #: | RP1E090RPTR-ND |
Manufacturer Part#: |
RP1E090RPTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 30V 9A MPT6 |
More Detail: | P-Channel 30V 9A (Ta) 2W (Ta) Surface Mount MPT6 |
DataSheet: | RP1E090RPTR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | MPT6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16.9 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The RP1E090RPTR is a single MOSFET transistor which has a wide range of applications.
MOSFETs are used as amplifiers, switches, analog/logic controllers and in many other electronic applications. They are also used in areas such as telecommunications, consumer electronics and medical electronics. The RP1E090RPTR has a high-speed switching performance compared to other MOSFETs, making it suitable for applications such as those mentioned.
The working principle of MOSFETs is based on the idea of an electric field. A field-effect transistor is a three-terminal device consisting of a \'gate\' controlled by an electric field. A voltage applied to the gate will control the electric field and thus the flow of current through the MOSFET. If the voltage is too high, the electric field will become too strong and the current will be prevented from flowing.
The RP1E090RPTR MOSFET has an operating voltage of up to 30V, making it suitable for many applications such as switching, controlling and amplifying. It is available in a wide range of packages and is also lead-free, making it compliant with RoHS (Restriction of Hazardous Substances) and low-power considerations. Its high-speed switching performance, coupled with its low on-resistance and low gate-charge, makes the RP1E090RPTR MOSFET suitable for a wide range of applications.
The RP1E090RPTR MOSFET has a drain-source breakdown voltage of up to 500V, making it suitable for higher voltage applications such as lighting and motor control. Because of its small size, the RP1E090RPTR is also ideal for applications which require a low on-state resistance and low capacitance. The low gate-charge of the RP1E090RPTR also means it is suitable for applications which require a fast switching response.
The RP1E090RPTR MOSFET is a versatile and reliable transistor which finds application in a wide range of areas. Its high-speed switching performance and low on-resistance make it suitable for many different applications, from lighting control to medical electronics. By combining the advantages of a low gate-charge and low capacitance, the RP1E090RPTR MOSFET can be used for many different applications.
The specific data is subject to PDF, and the above content is for reference
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