RP1E090RPTR Allicdata Electronics

RP1E090RPTR Discrete Semiconductor Products

Allicdata Part #:

RP1E090RPTR-ND

Manufacturer Part#:

RP1E090RPTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 9A MPT6
More Detail: P-Channel 30V 9A (Ta) 2W (Ta) Surface Mount MPT6
DataSheet: RP1E090RPTR datasheetRP1E090RPTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: MPT6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The RP1E090RPTR is a single MOSFET transistor which has a wide range of applications.
MOSFETs are used as amplifiers, switches, analog/logic controllers and in many other electronic applications. They are also used in areas such as telecommunications, consumer electronics and medical electronics. The RP1E090RPTR has a high-speed switching performance compared to other MOSFETs, making it suitable for applications such as those mentioned.

The working principle of MOSFETs is based on the idea of an electric field. A field-effect transistor is a three-terminal device consisting of a \'gate\' controlled by an electric field. A voltage applied to the gate will control the electric field and thus the flow of current through the MOSFET. If the voltage is too high, the electric field will become too strong and the current will be prevented from flowing.

The RP1E090RPTR MOSFET has an operating voltage of up to 30V, making it suitable for many applications such as switching, controlling and amplifying. It is available in a wide range of packages and is also lead-free, making it compliant with RoHS (Restriction of Hazardous Substances) and low-power considerations. Its high-speed switching performance, coupled with its low on-resistance and low gate-charge, makes the RP1E090RPTR MOSFET suitable for a wide range of applications.

The RP1E090RPTR MOSFET has a drain-source breakdown voltage of up to 500V, making it suitable for higher voltage applications such as lighting and motor control. Because of its small size, the RP1E090RPTR is also ideal for applications which require a low on-state resistance and low capacitance. The low gate-charge of the RP1E090RPTR also means it is suitable for applications which require a fast switching response.

The RP1E090RPTR MOSFET is a versatile and reliable transistor which finds application in a wide range of areas. Its high-speed switching performance and low on-resistance make it suitable for many different applications, from lighting control to medical electronics. By combining the advantages of a low gate-charge and low capacitance, the RP1E090RPTR MOSFET can be used for many different applications.

The specific data is subject to PDF, and the above content is for reference

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