RS1DFSHMWG Discrete Semiconductor Products |
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| Allicdata Part #: | RS1DFSHMWGTR-ND |
| Manufacturer Part#: |
RS1DFSHMWG |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE |
| More Detail: | Diode Standard 200V 1A Surface Mount SOD-128 |
| DataSheet: | RS1DFSHMWG Datasheet/PDF |
| Quantity: | 7000 |
| 3500 +: | $ 0.04247 |
| 7000 +: | $ 0.03822 |
| 10500 +: | $ 0.03398 |
| 24500 +: | $ 0.03185 |
| 87500 +: | $ 0.02831 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 150ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 200V |
| Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | SOD-128 |
| Supplier Device Package: | SOD-128 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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RS1DFSHMWG (Restricted Single Die Fully Shielded Multi Wire Grown) is a type of single-die rectifier that is used in high temperature and high frequency applications. This type of rectifier has a unique construction that allows it to deliver a high power output in a very small package. The length of the rectifier is typically smaller than a standard rectifier, and the lead spacing is narrower than standard rectifiers. This makes it ideal for space-constrained applications.
The RS1DFSHMWG consists of a silicon-on-insulator (SOI) die with an integrated poly-silicon gate oxide layer. The oxide layer is formed using poly-silicon that is grown on the wafer in a process known as wire-grown process. The poly-silicon gate oxide layer is designed to be very thin and highly temperature resistant. It provides a great deal of control over the electrochemical stability of the device.
The device is constructed from the bottom up. It starts with the poly-silicon gate oxide layer which is surrounded by a dielectric barrier that prevents the flow of current from the gate to the source and drain. Then, the source and drain regions are formed in the poly-silicon layer. The source and drain regions are connected to a metal layer, which provides the current flow path.
The device works by using reverse-biased connection. When a negative voltage is applied to the gate of the device, it causes a depletion region to form between the source and drain. As the voltage increases, more charge carriers are trapped in the depletion region, which creates a current path that allows charge to flow. The current flow is very fast so a large amount of power can be delivered in a very small package.
The advantage of using RS1DFSHMWG is that it is capable of working in high temperature and high frequency applications because of its low power consumption and low power losses. It is also a very reliable device that has a long lifetime. This makes it ideal for use in high-reliability applications such as aerospace and military applications.
RS1DFSHMWG rectifiers are typically used in applications such as power supplies, motor drives and portable applications. In addition, they can be used in LED driver designs and high frequency switching applications. They are also ideal for power conditioning, over-load protection and energy storage applications.
RS1DFSHMWG rectifiers are able to deliver a high power output in a small package. This makes them suitable for space-constrained applications where space is of an utmost concern. They are also very reliable and have a long lifetime, making them ideal for use in high-reliability applications. These devices are typically used in power supplies, motor drives and portable applications.
The specific data is subject to PDF, and the above content is for reference
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| RS1DLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
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RS1DFSHMWG Datasheet/PDF