Allicdata Part #: | RS1GFSMWGTR-ND |
Manufacturer Part#: |
RS1GFS MWG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE |
More Detail: | Diode Standard 400V 1A Surface Mount SOD-128 |
DataSheet: | RS1GFS MWG Datasheet/PDF |
Quantity: | 7000 |
3500 +: | $ 0.04247 |
7000 +: | $ 0.03822 |
10500 +: | $ 0.03398 |
24500 +: | $ 0.03185 |
87500 +: | $ 0.02831 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | SOD-128 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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RS1GFS MWG Application Field and Working Principle
RS1GFS MWG (Metal-Oxide Semiconductor Field-Effect Transistor) is a power device that can be used for a variety of purposes from switching to regulation and amplification, as well as rectification. This type of MOSFET is composed of a metal-oxide layer that acts as an electrical insulator and also forms part of a gate terminal. The gate terminal is then connected to an external voltage source, and when it is activated, a cross-over region is created between the metal-oxide and the substrate, resulting in a potential barrier that can either let through or prevent a current flow. The decision of current flow is controlled by the gate voltage and the drain-source voltage. Therefore, RS1GFS MWG is an excellent choice for bi-directional switching applications such as motor control and power conversion.
RS1GFS MWG can also be used for rectification purposes as it is very efficient and has a low voltage drop; this makes it suitable for rectifying ac and dc signals. It also allows for the conversion of ac to dc, simplifying power system design and manufacture. When used for rectification, the MOSFETs are operated in unipolar mode, one of the two major types of MOSFET applications. In this mode, a reverse blocking state is achieved, wherein the MOSFET is blocked against current flowing from drain to source regardless of the gate voltage.
Apart from rectification and switching applications, RS1GFS MWG can also be used for the amplification of signals. The MOSFET can be used as a voltage regulator, where its gate voltage can be adjusted to control the voltage at the drain source by varying the width of its conducting channel. Low input impedance is another key feature of the RS1GFS MWG MOSFET, allowing higher frequency signals to be amplified with greater fidelity than other MOSFETs.
In conclusion, RS1GFS MWG is a versatile power device that can be used for a variety of applications, including switching, regulation, amplification and rectification. Its low voltage drop and efficiency make it particularly suitable for rectification, while its low input impedance is beneficial for signal amplification purposes. Additionally, its high-performance features make it a wonderful choice for applications that require high power or precise control.
The specific data is subject to PDF, and the above content is for reference
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