![RS1G260MNTB Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | RS1G260MNTBTR-ND |
Manufacturer Part#: |
RS1G260MNTB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 40V 26A 8HSOP |
More Detail: | N-Channel 40V 26A (Ta) 3W (Ta), 35W (Tc) Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-HSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2988pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RS1G260MNTB is a type of Field Effect Transistor (FET) that belongs to the category of MOSFETs (Metal-Oxide Semiconductor-Field Effect Transistors). It is a single FET and its application field is wide, ranging from consumer, industrial and automotive domains. This particular FET is typically used for high power switching and control operations.The working principle of RS1G260MNTB is relatively simple. It has three terminals: the source (S), the drain (D) and the gate (G). When a voltage is applied to the gate, it creates an electric field which is then used to modulate the conductivity of the source and drain regions. This modulation of conductivity allows for the control of power between the source and the drain, which makes the RS1G260MNTB FET an ideal choice for performing high power switching and control operations.
In consumer applications, RS1G260MNTB is typically used to control the current flow of devices like lamps, air conditioners and motors. The control of current flow enables an efficient distribution and use of power while extending the life of the appliance. In industrial applications, RS1G260MNTB is used to control power supplies and the switching of inductive loads, as well as to control logic circuits. In automotive applications, the FET is typically used in engine control, power management and infotainment systems.
RS1G260MNTB\'s versatile application field and wide range of operating parameters make it an increasingly popular device in both consumer and industrial applications. Its ability to control high power, along with its small dimensions, is what makes this FET an ideal choice for controlling operations. Additionally, its fast switching capabilities, low leakage current and high speed of operation make it ideal for use in high frequency circuits. The RS1G260MNTB FET is thus becoming an increasingly popular choice for a variety of applications in both consumer and industrial markets.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1GB-13-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 400V 1A SM... |
RS1G R3G | Taiwan Semic... | 0.04 $ | 9000 | DIODE GEN PURP 400V 1A DO... |
RS1GL R3G | Taiwan Semic... | 0.05 $ | 3600 | DIODE GEN PURP 400V 800MA... |
RS1GLWHRVG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A SO... |
RS1G260MNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 40V 26A 8HSOP... |
RS1G300GNTB | ROHM Semicon... | 0.64 $ | 1000 | MOSFET N-CH 40V 30A 8HSOP... |
RS1GTR | SMC Diode So... | 0.02 $ | 110000 | DIODE GEN PURP 400V 1A SM... |
RS1GLW RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A SO... |
RS1G | ON Semicondu... | -- | 127500 | DIODE GEN PURP 400V 1A SM... |
RS1G-13-F | Diodes Incor... | -- | 50000 | DIODE GEN PURP 400V 1A SM... |
RS1G M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1G-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1G-M3/61T | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GFS MXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 400VDiod... |
RS1GFSHMXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 400VDiod... |
RS1GL RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 400V ... |
RS1GFA | ON Semicondu... | 0.06 $ | 6000 | DIODE GP 400V 800MA SOD12... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
![IRFL31N20D Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
![IXTT440N055T2 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 800V 14A TO-247N-Channel 800...
![IXTH14N80 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
![IXFT23N60Q Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 200V 72A TO-268N-Channel 200...
![IXTT72N20 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
![IXFT9N80Q Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)