Allicdata Part #: | RS1G/1GI-ND |
Manufacturer Part#: |
RS1G/1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO214AC |
More Detail: | Diode Standard 400V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | RS1G/1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS1G |
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RS1G-1: Application Field and Working Principle
RS1G-1 single diodes are among the most common rectifiers found in industry today. RS1G-1 diodes are mainly used in the application of amplifiers, switching power supply, battery chargers, and similar power circuits. This allows them to be used in commercial equipment and household appliances.
The RS1G-1 engineering structure helps reduce the voltage ratio and improve power input circuit efficiency. The RS1G-1 single diodes are constructed with a single layer of semiconductor material, allowing for a higher level of electrical efficiency. Furthermore, the RS1G-1’s ability to handle high power makes them an ideal choice for a variety of applications in the automotive and industrial sectors.
RS1G-1 diodes\' working principle is one of PN junction. In a PN junction, one side becomes P-type material and the other side becomes N-type material, which form a potential barrier in the region after that. When the diode is connected in the forward direction across a DC source, the potential barrier is enabled. Electrons can flow freely across the junction, while the majority carriers (holes) are blocked. Thus, electrical current is able to flow through the diode and the diode can turn on.
When a reverse voltage is applied to the junction, the potential barrier blocks the flow of electrical current, and the diode cannot turn on. This is due to the lack of an operational PN junction needed for electrical current flow. The barrier blockages structure also grants the diode its capability to operate as a permanent one-way valve. As such, the diode can work in various circuits to allow the current in one direction and prevent the current from flowing in another.
The RS1G-1 single diodes stand out among their peers for their wide range of applications and superior performance capabilities. The capacity for higher voltages, enhanced heat rejection, and improved electrical efficiency allows for the use of RS1G-1 single diodes in various applications. Furthermore, their ability to provide quick switching and low forward voltage drop offer the optimal combination of performance and cost effectiveness.
The RS1G-1 single diodes offer a high level of efficiency, reliability, and power handling capabilities, making them a perfect choice for applications such as amplifiers, switching power supplies, and battery chargers. Furthermore, the built-in protection structure of the diodes helps to protect circuits from reverse voltages and reduces the voltage ratio in order to improve circuit efficiency. The unique construction and performance of the RS1G-1 single diodes, along with their multiple uses, makes them a very advantageous solution for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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