| Allicdata Part #: | RS1GHE3/5AT-ND |
| Manufacturer Part#: |
RS1GHE3/5AT |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 400V 1A DO214AC |
| More Detail: | Diode Standard 400V 1A Surface Mount DO-214AC (SMA... |
| DataSheet: | RS1GHE3/5AT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 150ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 400V |
| Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | RS1G |
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Diodes - Rectifiers - Single
The RS1GHE3/5AT single rectifier diode is a semiconductor device commonly used in electrical systems. It is used to convert alternating current (AC) to direct current (DC). The diode is composed of two layers of material: a semiconductor layer and a metal layer. The semiconductor layer is made of gallium arsenide (GaAs) and is between two copper oxide layers. The copper oxide layers are then surrounded by a metal conductor, typically copper.
When a voltage is applied across the two layers, the electrons in the metal layer will become excited and move to the semiconductor layer. The electrons move to the lower energy state in the semiconductor layer which allows for current to flow. The diode can be biased and has two distinct functions; it can act as an insulator or a conductor.
RS1GHE3/5AT single rectifier diode has a variety of applications in electrical systems. The most common application is rectification, in which AC is converted to DC. This can be seen in various electronics and power supplies. The diode is also utilized in voltage regulators, inverters, and power factor controllers to control currents. Some batteries also use this type of diode to reduce their voltage in order to increase efficiency.
The RS1GHE3/5AT single rectifier diode is equipped with a wide variety of features and specifications. It has a current capability of 0.1A and a highly reliable operation with a very low forward voltage drop. It also has very low leakage current and excellent temperature stability. The diode is also designed to be very easy to install and requires very little maintenance.
Due to its versatility and wide range of features and specifications, the RS1GHE3/5AT single rectifier diode is a popular choice among many engineers and technicians. It is a very reliable and effective solution for a wide variety of applications and can be used in a range of devices and equipment. It is an efficient and cost-effective solution for electrical systems with a wide range of voltage and current requirements.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RS1G R3G | Taiwan Semic... | 0.04 $ | 9000 | DIODE GEN PURP 400V 1A DO... |
| RS1GB-13-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 400V 1A SM... |
| RS1GHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G | ON Semicondu... | -- | 127500 | DIODE GEN PURP 400V 1A SM... |
| RS1GLW RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A SO... |
| RS1GL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GFA | ON Semicondu... | 0.06 $ | 6000 | DIODE GP 400V 800MA SOD12... |
| RS1GL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G260MNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 40V 26A 8HSOP... |
| RS1GLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GL R3G | Taiwan Semic... | 0.05 $ | 3600 | DIODE GEN PURP 400V 800MA... |
| RS1GL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 400V ... |
| RS1G M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1GLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1G-M3/61T | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G300GNTB | ROHM Semicon... | 0.64 $ | 1000 | MOSFET N-CH 40V 30A 8HSOP... |
| RS1GFSHMWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 400V ... |
| RS1GLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1GFS MXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 400VDiod... |
| RS1GLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1GL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1G120MNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 40V 12A 8HSOP... |
| RS1G-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A SM... |
| RS1GL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1G-E3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1GHE3_A/H | Vishay Semic... | 0.08 $ | 3600 | DIODE GEN PURP 400V 1A DO... |
| RS1GB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A SM... |
| RS1G180MNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 40V 18A 8HSOP... |
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RS1GHE3/5AT Datasheet/PDF