RS1GHE3/61T Allicdata Electronics
Allicdata Part #:

RS1GHE3/61T-ND

Manufacturer Part#:

RS1GHE3/61T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 1A DO214AC
More Detail: Diode Standard 400V 1A Surface Mount DO-214AC (SMA...
DataSheet: RS1GHE3/61T datasheetRS1GHE3/61T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS1G
Description

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Diodes are a type of semiconductor device that limits or controls the flow of current, acting as a one-way valve for electronic circuits. Rectifiers are a type of diode used to convert alternating current (AC) to direct current (DC). Single rectifiers are diodes specifically designed to be placed in series with an AC supply. The RS1GHE3/61T diode is an example of a single rectifier.

The RS1GHE3/61T is a high-performance single silicon rectifier diodes rated at up to 1.3A and 200V. It provides excellent performance in applications such as telecommunication systems, computer peripherals, and other electronic circuits. In addition, it features low forward voltage drop (VF) and low reverse leakage current (IR).

The RS1GHE3/61T has a wide range of applications, including power supplies and motor control. It is also commonly used in automotive applications, as it can withstand temperatures between -40℃ and 150℃, making it extremely durable. Due to its low capacitance, it is suitable for use in high frequency switching applications and in applications where a high surge current is required.

The RS1GHE3/61T is constructed of silicon, a semi-insulating material. It is composed of two P-type and two N-type regions which form two separate regions in the diode. This structure is referred to as a “junction.” The anode and cathode, the two external connections of the diode, are connected to each of the two junctions. The current flow between the anode and the cathode is unidirectional, as the diode only allows current to flow in one direction.

When the anode is connected to the positive lead of an AC source and the cathode to the negative lead, the diode will allow current to flow. When the anode and cathode are connected in the opposite direction, the diode will block the current flow and no current will pass through it. This is the principle of rectification.

The RS1GHE3/61T’s high current rating and wide operating temperature range make it well-suited for use in a variety of applications. Its ability to withstand high surge currents and its low capacitance make it particularly suitable for use in high frequency applications such as automotive control. It is also commonly used in power supplies and motor control.

The specific data is subject to PDF, and the above content is for reference

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