RS1G120MNTB Discrete Semiconductor Products

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RS1G120MNTB is a single MOSFET characterized by low profiledu andhigh power density, making it a suitable choice for many applications. It belongs to MOSFET family of FETs and it is designed for both analog and digital applications.

RS1G120MNTB works based on the field-effect transistor (FET) principle which states that current flows through the channel between the source and drain when the voltage is applied to the gate. It is used for amplifying or switching electronic signals. It distinguishes itself from the bipolar junction transistor (BJT) due to its insulated gate. The insulated gate enables to control the flow of current in the FET in a much easier way than the BJT.

RS1G120MNTB has a maximum voltage rating of 30V, total gate charge 16nC and gate impedance of 22Ohms, some of its main characteristics. It includes an integrated Schottky diode which helps to avoid current spikes. This FET can be used in applications such as power supplies, AC switch, and audio amplifying, noise canceling and many other industrial, automotive and consumer electronics.

RS1G120MNTB features excellent thermal conductivity, low thermal resistance and proof against high frequencies, enabling to switch quickly, thus being a great solution for applications operating in high voltages and currents. It can also withstand high temperatures (up to 150°C), thanks to its high temperature resistance, making it suitable for use in harsh environments.

RS1G120MNTB makes a great choice for many applications because of its excellent performance in terms of frequency and voltage, as well as its low gate charge. It also benefits from its built-in Schottky diode which helps to avoid current spikes. All in all, RS1G120MNTB is a great choice for applications requiring high voltage, high current and fast switching.

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