RSD100N10TL Allicdata Electronics

RSD100N10TL Discrete Semiconductor Products

Allicdata Part #:

RSD100N10TLTR-ND

Manufacturer Part#:

RSD100N10TL

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 100V 10A CPT3
More Detail: N-Channel 100V 10A (Ta) 20W (Tc) Surface Mount CPT...
DataSheet: RSD100N10TL datasheetRSD100N10TL Datasheet/PDF
Quantity: 1000
1 +: $ 0.41000
10 +: $ 0.39770
100 +: $ 0.38950
1000 +: $ 0.38130
10000 +: $ 0.36900
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 133 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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RSD100N10TL is a type of field-effect transistor (FET) that belongs to the class of MOSFETs, short for metal–oxide–semiconductor FETs. It is a single FET, meaning it includes just one semiconductor channel instead of multiple channels like double or quad FETs. It is widely used as a switch in many applications such as audio amplifiers, switching power supplies, power switching circuits, and regulated DC/DC converters.

A field-effect transistor is a type of transistor which operates on the principle of an electric field. The electric field of a gate (or gate electrode) can control the flow of electrons in the channel between the drain and source terminals. It is very similar to a normal transistor in its operation, but there are some advantages of FET over the bipolar junction transistors, especially in terms of its ability to handle high current and its low power dissipation. In comparison with other types of FET, MOSFETs are more efficient in terms of switching times, power consumption, and speed.

RSD100N10TL is a type of enhancement mode MOSFET, which is used for power semiconductor switching. The main features of this device include a wide range of operating temperature between -55°C and 175°C, a high-frequency performance of up to 4GHz, and low on-state resistance. It is also able to withstand high surge currents, making it suitable for a wide range of applications.

The working principle of this device is based on the application of electric field to the semiconductor channel between the drain and source terminals. When a voltage is applied to the gate, a current will flow between the drain and source, allowing current to flow through the device. The current flow is directly proportional to the amount of voltage applied to the gate and the amount of electric field created in the channel. As the voltage applied to the gate increases, the amount of current through the device increases, allowing more power to be transferred.

This device is commonly used in power switching, as it is able to transfer large amounts of power very quickly. Furthermore, its ability to handle surge currents makes it suitable for a wide range of applications, from audio amplifiers to switching power supplies. It is also commonly used in regulated DC/DC converters, as it is able to maintain the voltage from the source at a certain level despite the changes in the load.

In conclusion, RSD100N10TL is a type of field-effect transistor that belongs to the class of MOSFETs. It is a single FET, and its working principle is based on the application of electric field to the semiconductor channel between the drain and source terminals. The device is widely used in many applications such as audio amplifiers, switching power supplies, power switching circuits, and regulated DC/DC converters. It is able to handle high surge currents and maintain the voltage from the source at a certain level.

The specific data is subject to PDF, and the above content is for reference

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