RSD175N10TL

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RSD175N10TL is a high voltage and high current Power MOSFET manufactured by Vokes Electro Ltd. It is a N-Channel Enhancement Mode undedicated MOSFET and it is based on field effect technology, a variation of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is an advanced power semiconductor device that is used in power switching applications which require high voltage and high current rating.

The RSD175N10TL is constructed on a single diffusion Silicon die. The device features N-Channel enhancement type MOSFETs, with low on-state resistance, fast switching times, high voltage and high current ratings. Additionally it has an in-built Avalanche breakdown protection, allowing it to be used in various high-power switching applications. The RSD175N10TL is a small package TO-220 low voltage MOSFET with low on-state resistance, short switching times, and low power and thermal dispersion.

The main application field of the device is to be used as a high current gate driver in power components such as high voltage DC motors and other similar equipment. It is also used as an amplifier and switching device in various digital radio and TV applications.

The main working principle behind RSD175N10TL is that when a positive voltage is applied to the Drain, it creates a electrical field across the Oxide layer. This field creates a depletion region that effectively works as a resistor, limiting the current flow across the Channel. The higher the voltage, the greater the depletion region, effectively reducing the current flow. Conversely, when a negative voltage is applied, it reduces the depletion region, allowing more current flow.

In practical applications, the RSD175N10TL is used to provide low-voltage, low-power, high-current control for a wide range of industrial and consumer electronics. Its main function is to modulate the current flow through a controlled device. For example, in cars, these MOSFETs are used to control current flow to the fuel injectors. Other applications include controlling the voltage in power tools, and providing speed control in air conditioning & other household appliances.

In summary, RSD175N10TL is a high voltage and high current power MOSFET used in various power switching applications. It is constructed on a single diffusion silicon die and features N-Channel enhancement type MOSFETs. Its main application field is to be used as a high current gate driver in power components such as high voltage DC motors and other similar equipment. Its main working principle is that when a positive voltage is applied to the Drain, it creates a electrical field across the Oxide layer which limits the current flow across the Channel. Additionally, when a negative voltage is applied, it reduces the depletion region, allowing more current flow.

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