RSD160P05TL

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	CPT3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	20W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	50 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta)
Drain to Source Voltage (Vdss):	45V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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The RSD160P05TL is an n-channel Enhancement Mode Field effect transistor (MOSFET) that is designed to provide reliable and robust switching performance when used in an electronic system. This device is most suitable for DC and low AC power applications, such as switching loads, motor control, and lamp control, as well as consumer, industrial, and telecommunications applications.
This MOSFET is a three-terminal device that includes the Drain, Source, and Gate terminals. The MOSFET works by utilizing the electrostatic field generated by the Gate terminal to control the flow of electrons (i.e. current) between the Drain and Source terminals.
When the Gate terminal is left open (no voltage applied), it will effectively float and therefore, no current will flow between the Drain and Source. When a voltage is applied to the Gate, it will produce an electrostatic field that attracts electrons from the Drain, resulting in current flowing through the device. The higher the voltage applied to the Gate, the more electrons attracted and thus, the higher the current that is allowed to flow through the device.
The RSD160P05TL is designed to have a Drain-Source breakdown voltage of 160 V and a Gate-Source breakdown voltage of 20 V. It is also designed to have a Drain-Source on-state resistance of 5 Ohms, a drain current of 8 A, and a maximum power dissipation of 30W. These specifications indicate that the device is suitable for applications that require higher voltages and currents to be switched, such as motor control or lamp control.
The typical applications for the RSD160P05TL include DC to DC converters, load switching applications, power supply controllers, power MOSFETs, motor control systems, lamp control systems, and other consumer, industrial, and telecommunications applications.
In summary, the RSD160P05TL is an n-channel enhancement-mode field effect transistor (MOSFET) designed to provide reliable and robust switching performance when used in an electronic system. It has a drain-source breakdown voltage of 160 V, a gate-source breakdown voltage of 20 V, a drain current of 8 A, and a maximum power dissipation of 30W. Its typical applications include load switching, motor control, and lamp control in a wide range of consumer, industrial, and telecommunications applications.

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