RSD150N06TL

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	CPT3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	20W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	930pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	40 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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Introduction:

RSD150N06TL is a MOSFET which belongs to ST’s STripFET™ II family, specifically to the popular STripFET™ II Power MOSFET technology. These MOSFETs are designed to provide superior RDS(ON) x Qg values in combination with an attractive lead frame design. It has excellent properties like low on-resistance, high slew-rate, wide operating area and high reliability. It is specifically designed to optimize high density power conversion solutions in applications such as high-end servers, desktop PCs, battery operated devices, hard drive, etc.

Application field and Working principle:

RSD150N06TL is ideal for high-performance circuits in various applications such as industrial, consumer, business, and network systems. This MOSFET is suitable for all kinds of DC-DC converters, with attractive solutions for high-current power solutions like buck converters and flyback converters. Its low on-resistance and good gate charge makes it reliable for many power switching applications in specific industrial, consumer, and communication equipment.The working principle of the RSD150N06TL is based on the fundamentals of MOSFETs. The main function of the MOSFET is to regulate the current flow through the channel between its source and drain terminal. When a gate-source voltage is applied to it, the channel between the source and drain terminals is opened and current will start to flow through the channel. The current flow is regulated by the gate-voltage. The higher the gate-voltage, the more current can flow through the channel thus more power is dissipated. The RDS (on) for this device is 150mΩ which makes it ideal for high current applications.Furthermore, the RSD150N06TL has a low gate charge that requires less current to drive the device as compared to other MOSFETs. This ensures that the device is able to handle high switching frequency applications without any reliability issues and also keeps power losses to a minimum. Furthermore, it features a wide safe operating area and high avalanche capability that makes it highly voltage safe and reliable and a great choice for applications where high voltage spikes, transient simulations or vibration tests are to be conducted. This MOSFET also has an extremely low on-resistance (RDS (on)) of only 0.15 Ω. This leads to a low voltage drop across the device, allowing for maximum power efficiency in applications such as DC-DC converters, where there is a need for higher power conversion efficiency. Overall, the RSD150N06TL is an ideal choice for various high current applications. It offers low on-resistance, high power efficiency, a wide operational area and excellent protection against voltage spikes and is highly reliable even at extreme switching frequencies.

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