S34ML01G200TFV000

Series:	ML-2
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S34ML01G200TFV000 memory is a type of non-volatile memory that has excellent stability, as well as faster read and write times than its non-volatile counterparts. The addition of an integrated controller simplifies architecture and enhances overall system performance. This memory provides a combination of low power and large density, while also delivering high reliability, making it well suited for use in a variety of applications. In this article, we will discuss the application field and working principle of S34ML01G200TFV000 memory.Applications S34ML01G200TFV000 memory is used in a variety of applications. It can be found in embedded systems, networking, automotive, and consumer applications, as well as in computers, printers, and image sensors. This memory is also well suited for applications that need to read and write data at high speeds, such as those in hard drives and flash memories. In addition, due to its low power consumption, S34ML01G200TFV000 memory is often used in battery powered devices. Its small footprint and the ability to retain data even when power is removed makes it especially well suited for mobile devices, such as smartphones and tablets.S34ML01G200TFV000 memory is also used in automotive applications. This type of memory is used in vehicle control systems, infotainment systems, as well as in navigation systems. Its non-volatility and fast read/write times provide a reliable way to store data in vehicles while ensuring that the data is not lost during power outages.Working PrincipleS34ML01G200TFV000 memory utilizes a combination of DRAM and NOR technology to provide a large amount of data storage in a low power package. This type of memory is divided into two sections: the main memory and the buffer memory.The main memory part is based on a capacitor stored memory cell structure. It works by collecting charges in the form of electricity. This electricity is used to store data and the charge is kept even when the power supply is turned off. This type of memory is non-volatile, meaning that it does not lose its data when power is removed. The buffer memory works similar to a SRAM. It utilizes latches to store data in the form of ones and zeros. This data is stored as long as the power is on, but is lost when power is removed.ConclusionS34ML01G200TFV000 memory is a type of non-volatile memory that offers a combination of performance, reliability, and low power consumption. It is well suited for use in a variety of applications, such as embedded systems, networking, consumer, automotive, and many more. This type of memory provides a combination of DRAM and NOR technology, with the main memory utilizing a capacitor stored memory cell structure and the buffer memory utilizing latches to store data.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description