S34MS02G104BHI010 Allicdata Electronics
Allicdata Part #:

1274-1066-ND

Manufacturer Part#:

S34MS02G104BHI010

Price: $ 7.99
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 4...
DataSheet: S34MS02G104BHI010 datasheetS34MS02G104BHI010 Datasheet/PDF
Quantity: 2100
1 +: $ 7.26390
10 +: $ 6.68745
25 +: $ 6.54822
50 +: $ 6.52516
210 +: $ 5.85372
420 +: $ 5.67622
630 +: $ 5.39839
1050 +: $ 5.20931
Stock 2100Can Ship Immediately
$ 7.99
Specifications
Series: MS-1
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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Memory is a vital component in any digital system, providing the required functionality to store and retrieve data quickly and efficiently. The S34MS02G104BHI010 is a comprehensive, high-performance memory solution from Microchip Technology Inc. The S34MS02G104BHI010 is an ideal memory solution for applications in the industrial, medical, aerospace and defense, networking and communications, automotive, and consumer electronics fields. This Memory provides a wide range of features such as fast page read/write on-die functions, voltage/temperature margin testing, extended refresh cycles, and low standby power. It also features a suite of on-die features such as built-in redundancy, error correction, and power-loss protection.

The S34MS02G104BHI010 is a 4 Gb double-cell NAND memory die designed for high performance applications. It supports 4-KB page reads, 2-KB page writes, and can operate across a voltage range of 1.8V to 6V. The S34MS02G104BHI010 is an advanced memory solution for processing very large amounts of data in short amount of time. It is built with reliable and cost-effective memory organization; an addressable Flash memory with features including Error Correction Code (ECC) and a 5th generation ECC engine. It also employs advanced NAND Flash technologies such as triple-level cell (TLC) and triple-level side die formation, hardware-level power fail protect and hardware-level ECC. The latest 5th generation ECC engine provides improved error correction performance and can read/process up to 1GB of data per second.

The S34MS02G104BHI010 is designed to operate in a wide range of application fields and environments. Its fast read/write speeds, low power consumption and extended refresh cycles are beneficial in applications such as consumer electronics, automotive, and industrial. Furthermore, in aerospace and defense applications, the fast data processing, built-in redundancy and error correction features offers enhanced system reliability and performance. In medical electronics applications, the low power consumption and extended refresh cycles provide for greater reliability. The extended refresh cycles also helps in preventing system malfunctions caused by shorting in the power-loss protection circuit.

Overall, the S34MS02G104BHI010 from Microchip is great for a wide range of applications. Its fast page read/write functions, low power consumption, extended refresh cycles and advanced error correction capabilities make it an ideal memory solution for various applications in the industrial, medical, aerospace and defense, networking and communications, automotive, and consumer electronic fields.

The specific data is subject to PDF, and the above content is for reference

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