S34MS02G104BHV013

Series:	MS-1
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (128M x 16)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-BGA (11x9)

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Introduction

S34MS02G104BHV013 is a type of memory storage device. It has been used in various applications by a lot of customers in recent years due to its excellent features and performance. The device is composed of a silicon nonvolatile memory and a decoder circuit. It has a capacity of 2GB and can store a large amount of data. The device is highly reliable and durable, making it a perfect choice for many applications.

Application Field

S34MS02G104BHV013 is widely used in many applications. The most common applications are personal computers and servers. The device can be used to store large amounts of data, such as video and audio files. It is also used in industrial control systems, where it can be used to store process parameters and control code. In addition, the device can be used in automation and robotics in order to store the program code and other information related to the control system.

Working Principle

The S34MS02G104BHV013 is a nonvolatile memory module composed of a silicon-oxide-nitride-oxide-silicon (SONOS) cell structure. The device is operated at low frequencies, usually around 1 MHz, to read and write data. The device is also built with a decoder circuit that allows data to be read and written using different command codes. The S34MS02G104BHV013 has an error correction circuit which ensures reliable data storage and retrieval.

Conclusion

To conclude, the S34MS02G104BHV013 is an excellent type of memory storage device. It is widely used in many applications, such as personal computers and servers, industrial control systems, automation, and robotics. Its SONOS structure ensures reliable data storage, and its decoder circuit allows data to be read and written using different command codes. The device is highly reliable and durable, making it a perfect choice for many applications.

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