S34MS01G200BHA000 Allicdata Electronics
Allicdata Part #:

S34MS01G200BHA000-ND

Manufacturer Part#:

S34MS01G200BHA000

Price: $ 3.38
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 45...
DataSheet: S34MS01G200BHA000 datasheetS34MS01G200BHA000 Datasheet/PDF
Quantity: 1000
210 +: $ 3.07125
Stock 1000Can Ship Immediately
$ 3.38
Specifications
Series: MS-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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S34MS01G200BHA000 Memory

The S34MS01G200BHA000 is a kind of memory device, specifically a Serial NOR Flash memory. It is a high-performance and cost-effective memory solution, based on the advancedDouble Data Rate (DDR) NAND architecture and Single Data Rate (SDR) interface. The S34MS01G200BHA000 is available in multiple densities and memories types, as well as multiple packages, making it ideal for a variety of applications.

Application Fields

The S34MS01G200BHA000 is widely used in some application fields. It is ideal for use in consumer and industrial applications, such as set-top boxes, digital TVs, gaming consoles, and more. It can also be found in automotive, networking, and communication equipment, including routers, switches, modems, and more. Additionally, it is widely used in computing, embedded systems, printers, healthcare, and alternative energy applications.

Working Principle

The S34MS01G200BHA000 works on the principle of fast-read and high-write performance, which makes it ideal for storing large amount of data which is frequently modified or read frequently. The S34MS01G200BHA000 is constructed from a NAND memory cell, which is composed of a floating well, a number of transistors and a tunnel oxide layer. It works on the principle of charge trapping, wherein the data is stored in the form of trapped electrons. The trapped electrons are read as 0 or 1, depending on the voltage of the well.

The S34MS01G200BHA000 has a page size of 8Kb, which allows it to store up to 8192 bits of data. It can also be programmed in blocks of 4Kb, which ensures that data can be written quickly and accurately. Writing data to the device is done using the Serial Peripheral Interface (SPI) protocol, which is based on four basic commands: Read, Program, Erase, and Reset. The data is written to the memory cells using the program command.

The S34MS01G200BHA000 uses a feature called ECC (Error Correction Code) which allows it to detect and correct errors in stored data, thereby improving data reliability. It also includes an on-chip write protection scheme which prevents data from being accidentally corrupted. Additionally, the device is also compatible with the JEDEC standard, allowing for backward compatibility with other devices.

Conclusion

In conclusion, the S34MS01G200BHA000 is a versatile and reliable memory device. Its performance, compatibility, write protection, and error correction features make it ideal for a variety of applications, ranging from consumer to industrial and automotive. The device is fast, accurate and reliable, making it an ideal choice for storing large amounts of data.

The specific data is subject to PDF, and the above content is for reference

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