S34ML04G200TFA003 Integrated Circuits (ICs)

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The S34ML04G200TFA003 is an 8 gigabit (Gb) Multi-Level Cell (MLC) NAND Flash memory and a member of the 3D NAND Flash family. It is a storage device that consists of two layers of electrodes, with transistors connected to each of the bottom layers. This allows for increased capacity in comparison to standard flash memory. The memory has an industry-standard,8-bit multiplexed data bus and an 8-bit multiplexed address/command bus.

For applications that require high performance and reliability, the S34ML04G200TFA003 can be used due to its low power consumption and excellent data reliability. The memory also features a high endurance rating, allowing for long-term storage of valuable data.The S34ML04G200TFA003 is suitable for applications in a wide range of fields, including mobile and consumer electronics, automotive electronics, and industrial control equipment. It is also used in memory cards and USB drives. In addition, it is suitable for other embedded applications such as set-top boxes and media players.

The main advantage of this memory is its 3D NAND structure, which allows for higher data storage capacity. The memory also has a high endurance rating for storage of valuable data, even in adverse conditions such as shock and vibration.The S34ML04G200TFA003 offers high levels of compatibility with a wide range of electronics systems. Its 8-bit multiplexed data and address buses enable it to connect easily and efficiently to many types of systems.

In terms of its working principle, the S34ML04G200TFA003 works by storing data in the form of electric charges on the electrodes. The charges are held in place by the transistors, which act as switches to allow or prevent the flow of electricity.When data is written to the memory, the charges are released from one layer and passed to the other. This process allows for writing and erasing of the data from the memory.The S34ML04G200TFA003 also offers an on-chip error-correcting code (ECC) for enhanced data reliability.

In summary, the S34ML04G200TFA003 is an advanced 8 gigabit (Gb) Multi-Level Cell (MLC) NAND Flash memory. It offers increased capacity compared to standard flash memory, and its 3D NAND structure enables high data storage capacity. The memory also has a high endurance rating, which makes it suitable for long-term storage of valuable data. In addition, its 8-bit multiplexed data and address buses enable it to easily connect to electronics systems. Finally, it features an on-chip error-correcting code (ECC) for enhanced data reliability.

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