S34MS01G104BHB013

The S34MS01G104BHB013 is a high speed, single-layer 4 Gbit, Multi-Chip Package (MCP) NAND Flash memory in a standard 54-pin TSOP package. This memory component is part of the Mobile SLC Series from SAMSUNG and is designed to provide a reliable source of storage for mobile and other consumer electronics devices. The component is designed to deliver fast read and write access times, meaning it can transfer data quickly and efficiently.

The S34MS01G104BHB013 is an ideal choice for consumer electronics manufacturers who are looking for a modern, cost-effective storage component with fast access times. It is compatible with high-speed buses and devices including USB 3.0, eMMC 5.0 and UFS 2.0. The component is also rated as highly reliable, as it has been certified by the major standards organizations such as JEDEC, RoHS and REACH.

As a single-layer NAND Flash memory component, the S34MS01G104BHB013 is designed to store data in a non-volatile manner, meaning it does not need to be continually powered in order for the data to remain stored. This makes it ideal for use in mobile devices and other batteries-powered systems where power is at a premium. The component is also designed to be resistant to damage from power fluctuations, making it an especially reliable choice for critical data.

In terms of its applications, the S34MS01G104BHB013 is best suited to applications that require a high level of performance and reliability from their storage component. It is ideal for use in mobile phones, digital cameras, camcorders, MP3 players and other consumer electronics devices where data transfer speed and storage capacity is at a premium. It is also suitable for use in automotive systems, industrial applications, and other specialized applications.

The working principle of the S34MS01G104BHB013 is based on the operation of physical memory cells. This component is comprised of a number of cells, each of which stores a digital bit. The cells are formed using floating-gate transistors and are arranged in blocks, where each block is composed of multiple cells. When data is written to or read from the memory component, the cells can be ‘activated’ or ‘deactivated’ enabling the data stored within them to be either read or written.

The operation of the S34MS01G104BHB013 is based on a number of advanced algorithms, which allow data to be read and written in a very efficient manner. Additionally, the means by which data is stored within the component makes it highly resistant to data loss and other disruptions. As a result, it is an extremely stable and reliable storage component, making it an ideal choice for many modern applications.