S34ML02G100TFI003 Allicdata Electronics

S34ML02G100TFI003 Integrated Circuits (ICs)

Allicdata Part #:

1274-1176-2-ND

Manufacturer Part#:

S34ML02G100TFI003

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 4...
DataSheet: S34ML02G100TFI003 datasheetS34ML02G100TFI003 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: ML-1
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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S34ML02G100TFI003 is a component in the family of NAND Flash memories, offering exceptional performance and reliability. This component can be used in a wide range of applications, including consumer applications such as tablet memory and embedded systems.

NAND Flash memories are non-volatile memory devices that are based on a floating gate concept. A floating gate is the area within a MOS gate structure that is used to store charge. The charge stored in the floating gate alters the conduction characteristics of the device, thus allowing it to be used as memory. This component is used to store data in digital form, as opposed to analog form.

S34ML02G100TFI003 has a high storage density, excellent durability and performance, and is suitable for a wide range of applications. It is an ideal solution for embedded applications such as automotive, security and industrial automation applications. It is also used in consumer applications such as tablets, digital cameras, or other consumer electronic devices.

The working principle of S34ML02G100TFI003 is based on the following principles:

  • Cell Wearout – Cell wearout is an important aspect of NAND Flash memories. Due to the structure of the device, charge stored in the floating gate is lost as a result of cell reads and writes. As such, it is important to take measures to minimize cell wearout.
  • Error Detection and Correction – NAND Flash memories are prone to data corruption due to bit errors. As such, it is important to use error detection and correction to improve data integrity. S34ML02G100TFI003 has an integrated error detection and correction circuit which helps improve data integrity.
  • Error Management – Error management is used to manage errors and reduce the number of errors in the device. Error management can be used to detect errors and reduce their impact on the device.
  • Write Speed – S34ML02G100TFI003 is capable of providing high write speeds compared to other NAND Flash memories. This ensures that data can be written quickly and reliably.

S34ML02G100TFI003 is a versatile component that is suitable for a wide range of applications. It offers robust performance, high storage density, and excellent durability. It is an ideal solution for embedded applications and consumer devices that require performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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