S34ML02G100BHV000 Allicdata Electronics
Allicdata Part #:

S34ML02G100BHV000-ND

Manufacturer Part#:

S34ML02G100BHV000

Price: $ 6.36
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 6...
DataSheet: S34ML02G100BHV000 datasheetS34ML02G100BHV000 Datasheet/PDF
Quantity: 1000
210 +: $ 5.77461
Stock 1000Can Ship Immediately
$ 6.36
Specifications
Series: ML-1
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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Memory

S34ML02G100BHV000 is a type of non-volatile memory chip, alongside other kinds of specialized memory chips, such as ROM and RAM. It is known for its high speed, low power consumption and long life. It is an ideal choice for data storage in applications that require reliable performance, such as automotive, industrial, and medical systems.

Application Field

S34ML02G100BHV000 provides an ideal solution for storing data in applications that require reliable performance. It is widely used in embedded systems such as automotive, industrial and medical. It can help car manufacturers to store data securely, such as navigation systems, anti-lock brakes, airbag deployments and airbag control systems. It is also used in automating industrial processes such as controlling welding machines and robotic arms, and in medical imaging and monitoring applications.

Working Principle

S34ML02G100BHV000 chips work on the principle of a charge-trapping mechanism. A gate-oxide layer and a floating gate are present on the chip, with them separated by an insulating layer. As voltage is applied to the floating gate, electrons are attracted and stored within it. When the voltage is reversed, the electrons flow back to the gate-oxide layer and the charge-trapping mechanism is reversed. In this way, the memory cells are preserved and the device can retain data for a long time.

S34ML02G100BHV000 also features wear-leveling algorithms to ensure reliable data storage. It adjusts how frequently each memory cell is used to prevent usage wear. This ensures that data is always accessible and reliable, even after long periods of inactivity.

S34ML02G100BHV000 also features an extra number of redundant bits, which protect the data from incorrect bit manipulation. This also helps it to ensure data integrity.

Conclusion

S34ML02G100BHV000 is a type of non-volatile memory chip which offers a reliable and efficient solution for data storage. Its fast speed, low power consumption and long life span make it the ideal choice for embedded systems, automotive and industrial applications. It works on the principle of a charge-trapping mechanism, and also features wear-leveling algorithms and redundant bits to ensure data integrity.

The specific data is subject to PDF, and the above content is for reference

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