S34ML02G200GHI003 Allicdata Electronics
Allicdata Part #:

S34ML02G200GHI003-ND

Manufacturer Part#:

S34ML02G200GHI003

Price: $ 4.08
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel
DataSheet: S34ML02G200GHI003 datasheetS34ML02G200GHI003 Datasheet/PDF
Quantity: 1000
2500 +: $ 3.71031
Stock 1000Can Ship Immediately
$ 4.08
Specifications
Series: ML-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory is a key component in an electronic system. The S34ML02G200GHI003 is a NAND Flash memory that is used in a variety of applications. It is a low-power, high-speed memory device that is used in industrial applications, automotive systems, and consumer electronics. It features a high-end endurance of up to 3,000 program/erase cycles.

The NAND Flash memory device can be used for a range of tasks as long as it is not exposed to over-voltage conditions. Its high-speed working and low-voltage operating characteristics make it suitable for a variety of applications. For example, the S34ML02G200GHI003 is ideal for memory and data storage in industrial and automotive applications.

The S34ML02G200GHI003 works on the principle of Coulomb’s law. This law states that electric charges obey the forces of attraction and repulsion and act on each other. In NAND Flash memory, this law is applied to electrical connection sites. The memory devices feature a plurality of memory cells, each containing an insulated gate charge that acts as a switch. A NAND string is formed when two cells share a connection site. When a voltage is applied to the connection site, the cells create a connection, allowing for data storage and retrieval.

The S34ML02G200GHI003 NAND Flash memory offers high endurance and is suitable for use in industrial applications such as control systems, automotive systems, and consumer electronics. It is capable of withstanding up to 3,000 program/erase cycles before any degradation in quality occurs. It offers a wide operating temperature range, making it suitable for extended use in numerous applications. Additionally, it is capable of reading and writing at high speeds, thus providing faster response times when used in systems.

The S34ML02G200GHI003 is one of the most reliable and flexible NAND Flash memory devices available. It is used in a variety of industrial, automotive, and consumer electronics applications due to its high-endurance and low-voltage working characteristics. Moreover, its high-speed operation and wide operating temperature range make it suitable for use in numerous applications. Its use of Coulomb’s law for data storage and retrieval make it a reliable choice for long-term applications.

The specific data is subject to PDF, and the above content is for reference

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