S34ML02G200TFV003 Allicdata Electronics
Allicdata Part #:

S34ML02G200TFV003-ND

Manufacturer Part#:

S34ML02G200TFV003

Price: $ 4.68
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 4...
DataSheet: S34ML02G200TFV003 datasheetS34ML02G200TFV003 Datasheet/PDF
Quantity: 1000
1000 +: $ 4.25250
Stock 1000Can Ship Immediately
$ 4.68
Specifications
Series: ML-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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S34ML02G200TFV003 is a type of chip from the S34ML family, manufactured by Toshiba. It is commonly used as a memory chip, primarily for storing data. The chip features a wide range of storage capacities, ranging from 128 MB of storage capacity for limited applications, to as much as 4 GB of storage capacity for applications that require large amounts of storage. The wide range of storage capacity makes the S34ML02G200TFV003 chip attractive for a wide range of application fields and usage scenarios.

In terms of application fields, the S34ML02G200TFV003 is primarily used in devices that require large amounts of data storage, and in situations where high levels of performance are required. Examples include digital cameras, digital video cameras, and digital music players. In all of these application fields, the S34ML02G200TFV003 chip is capable of offering large amounts of storage capacity and high levels of performance. It is also used in embedded systems, such as medical devices, industrial controllers, security systems and POS terminals.

As far as working principles are concerned, the S34ML02G200TFV003 chip uses a design principle known as floating gate-based non-volatile memory, or FMI. This principle is based on the concept of a floating gate, an electrical layer which is placed between two control gates. The floating gate is a type of non-volatile memory, in that the integrity of the stored data is preserved even when power is removed from the chip. This is the basic principle behind the FMI design of the S34ML02G200TFV003 chip.

The FMI design of the S34ML02G200TFV003 chip also offers a number of advantages. For example, it consumes less power than other types of memory designs, making it attractive for devices with long battery life. It is also capable of high speeds, making it attractive for applications that require high levels of performance. It is also comparatively smaller than other types of memory designs, making it ideal for applications which require space savings.

Overall, the S34ML02G200TFV003 chip from Toshiba is a highly attractive option for memory applications. It is capable of providing high levels of storage capacity and performance, as well as low power consumption and a smaller footprint. Along with its wide range of application fields, the S34ML02G200TFV003 is therefore an attractive choice for a range of uses, from digital cameras to embedded systems.

The specific data is subject to PDF, and the above content is for reference

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