S34ML04G200TFI900 Allicdata Electronics
Allicdata Part #:

428-4268-ND

Manufacturer Part#:

S34ML04G200TFI900

Price: $ 8.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 4...
DataSheet: S34ML04G200TFI900 datasheetS34ML04G200TFI900 Datasheet/PDF
Quantity: 180
1 +: $ 7.31430
Stock 180Can Ship Immediately
$ 8.04
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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Memory

S34ML04G200TFI900 is a type of memory components available for a variety of applications. It is generally optimized for use in embedded systems, intelligent network systems, as well as to provide higher performance and/or higher density memory solutions. This type of memory component has several advantages over other components, and it is quickly becoming a popular choice among developers and users alike.

The main feature which sets apart S34ML04G200TFI900 memory components from the other types of memory components is the fact that they utilize a triple-level cell (TLC) technology. This is a type of non-volatile memory that is more reliable, has a longer life span, and is less sensitive to interference than typical dynamic random access memory (DRAM). What’s more, the TLC technology used in S34ML04G200TFI900 memory components allows for up to eight times more data to be stored than DRAM, which makes them ideal for applications that require a large amount of memory. Additionally, the S34ML04G200TFI900 is organized by dynamic random access memory controllers, allowing for higher levels of organization and performance.

The S34ML04G200TFI900 memory component is also known for its superior endurance. In comparison to other memory components, the S34ML04G200TFI900 component is capable of sustaining up to 10-20 times more operations before degradation occurs. This makes it ideal for applications that require a long life span, such as in embedded systems.

In terms of its operation, the S34ML04G200TFI900 memory component functions by employing a write operation that is capable of carrying out up to 100,000 write cycles. This is done by means of a special three-level cell data quantity that is stored separately from the usual DRAM cells. This results in low latency as well as high speed data transfer. Additionally, the S34ML04G200TFI900 memory component operates on extremely low power, improving energy efficiency and decreasing power consumption.

As far as its application field is concerned, S34ML04G200TFI900 memory components can be used in a wide range of applications. They are typically used for applications that require a large amount of data storage, such as in embedded systems, or for applications that require a high level of organization and performance. Additionally, they are often found in smart network systems and automated systems, where they are used to provide robust, reliable, and efficient memory solutions.

In short, S34ML04G200TFI900 memory components are an excellent choice for users who require a reliable, efficient, and long-lasting memory solution. Thanks to its TLC technology, users can enjoy up to eight times more data storage and a longer life span than traditional DRAM. Additionally, its low power operation ensures energy efficiency and decreases power consumption. Thus, S34ML04G200TFI900 memory components are a great option for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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