S34MS01G200GHI003

Series:	MS-2
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	67-VFBGA
Supplier Device Package:	67-BGA (8x6.5)

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Application Field of S34MS01G200GHI003

S34MS01G200GHI003 is a type of dynamic random access memory (DRAM) designed for embedded systems. It belongs to the Double Data Rate memory category and offers a variety of features including high-speed data transfers, low power consumption, and small footprint.The S34MS01G200GHI003 is ideal for applications such as networking and communication, automotive, and industrial control. Its low power consumption and small size makes it well suited for embedded systems. It can help to increase the speed and reliability of systems by providing higher data transfer rates for real-time process control. Moreover, it is suitable for storage-intensive applications due to its high storage capacity.In automotive infotainment systems, the S34MS01G200GHI003 can be utilized to provide faster response times and smoother navigation. In networking and communication, it can be used to improve data transmission rates, reduce latency, and improve signal-to-noise ratios. In industrial control, it can help to increase the speed and reliability of automation systems by providing higher data transfer rates for real-time process control.

Working Principle of S34MS01G200GHI003

The S34MS01G200GHI003 is based on the Double Data Rate (DDR) technique. It incorporates two discrete data lines for maximum bandwidth. This enables it to achieve a data throughput of 16 GB/s. The DDR system features a prefetch buffer that is used to fetch data from the memory and store it internally. This technique accelerates data transfer rates, as the data can be requested from the buffer rather than the device itself.The S34MS01G200GHI003 uses an interface controller to manage the data transfer. This is a specialized logic that is responsible for controlling the communication between the host system and the device. The controller works with the prefetch buffer, data bus lines, and address bus lines to provide the necessary bandwidth and data retention requirements.Furthermore, the controller provides a command register cycle where commands can be written to the device. This allows the device to support various instructions and functions, thus providing better system flexibility.In addition, the S34MS01G200GHI003 also supports error correction codes (ECC) that are used to ensure that data is stored and retrieved accurately. This helps to ensure reliability and accuracy of data during data transfer.Overall, the S34MS01G200GHI003 is an advanced DRAM solution suitable for embedded applications such as networking and communication, automotive, and industrial control. It incorporates features such as data transfer rates of 16 GB/s, prefetch buffer, interface controller, and ECC for data accuracy. These features, along with its low power consumption and small form factor, make it an ideal choice for embedded systems.

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