S34MS04G200BHI003 Allicdata Electronics
Allicdata Part #:

S34MS04G200BHI003-ND

Manufacturer Part#:

S34MS04G200BHI003

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 45...
DataSheet: S34MS04G200BHI003 datasheetS34MS04G200BHI003 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: MS-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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Memory is a core component of modern computing systems and is available in various forms such as DRAM, SRAM, and Flash. One of the most popular types of memory is S34MS04G200BHI003, which is used in many applications. This type of memory is used in applications such as automotive, industrial, medical, and consumer electronics. In this article, we will discuss the applications and working principle of S34MS04G200BHI003 memory.

S34MS04G200BHI003 Application Field

S34MS04G200BHI003 memory is used in a variety of applications. Automotive applications of this type of memory include in-car infotainment systems, navigation systems, and engine management systems. In industrial applications, the memory is used for the development of smart factories, robots, and industrial automation. In medical applications, the memory is used in medical devices such as patient monitors, imaging systems, and diagnostic systems. The memory is also used in consumer electronics such as Smart TVs, smartphones, and tablets.

S34MS04G200BHI003 Working Principle

S34MS04G200BHI003 is a static random-access memory (SRAM) with a 8Mbit density. The memory has a pin-configuration of 50-ball LFBGA-EP and a 1.2V supply voltage. The memory has an access time of 30ns, an additional datain delay of 1 clock cycle, and a write latency of 2 clock cycles. The memory can operate at a temperature range of -40¢XC to +125¢XC.

Internally, the memory consists of an array of 8Mb cells connected with sense-amplifier and multiplexer circuitry. Each cell consists of six transistors with three of them being used to store the data. The data is stored as a binary value with logic 0 and logic 1. The memory is organized as 4 blocks of 4Mbits, each with a 1024-byte (128KB) address space.

Data transfer to and from the memory is achieved via the memory\'s address/data bus and Data In/Data Out pins. When selecting an address, the address is placed onto the address bus, and the Data In/Data Out pins are activated or inactive based on the type of data being read or written. In case of read operation, the data is output at the Data Out pin, while in case of write operation, the data is written to the selected address by driving the Data In pin. Depending on the operation, the data can be read or written on either a byte or word basis.

S34MS04G200BHI003 memory provides reliable and high-performance data storage for a wide range of applications. The memory is cost-effective, low power, and provides good data retention and fast access times. With its flexible pin configuration, small form factor, and superior performance, S34MS04G200BHI003 has become an attractive option for many applications.

The specific data is subject to PDF, and the above content is for reference

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