| Allicdata Part #: | 497-5464-ND |
| Manufacturer Part#: |
SD2903 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | TRANS RF N-CH HF/VHF/UHF M229 |
| More Detail: | RF Mosfet N-Channel 28V 100mA 400MHz 15dB 30W M229 |
| DataSheet: | SD2903 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | N-Channel |
| Frequency: | 400MHz |
| Gain: | 15dB |
| Voltage - Test: | 28V |
| Current Rating: | 5A |
| Noise Figure: | -- |
| Current - Test: | 100mA |
| Power - Output: | 30W |
| Voltage - Rated: | 65V |
| Package / Case: | M229 |
| Supplier Device Package: | M229 |
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SD2903 is a silicon-gated N-channel, depletion field-effect transistor (FET) specifically designed for use in radios and other high frequency applications. It combines the latest advances in semiconductor technology with superior RF performance and wide frequency response.
The SD2903 is commonly used to amplify and switch radio frequency signals. It is used in mobile phones, wireless networks, television broadcast systems, and other communication equipment. The device features a low threshold voltage for improved dynamic performance, low-input capacitance, and high-output power for high-gain operation. It also offers low-noise characteristics with good attenuation characteristics.
The SD2903 operates using depletion mode operation, meaning that it can be used as both an amplifier and a switch. It can be used as an amplifier when it is biased with a positive voltage and turns off when the drain voltage is lower than the gate voltage, allowing for fast switching. Alternatively, it can be used as a switch when it is biased with a negative bias and turns on when the drain voltage is equal to or greater than the gate voltage, allowing for very accurate switching.
The SD2903 is designed to be used in radio and other high frequency applications, where its low-noise and high power handling capabilities are ideal. Its low capacitance and low resistance make it an excellent choice for these types of applications. Furthermore, it is relatively easy to interface with other components, making it an ideal choice for system designs that require a high degree of integration.
The working principle of the SD2903 FET is the same as other FETs. An electrical signal is applied to the gate terminal, which controls the flow of electrons or holes between the source and drain terminals. In depletion mode operation, the device is typically biased with a negative gate voltage, which allows electrons or holes to freely flow from the drain to the source. When the gate is switched to a positive voltage, the electrons or holes are blocked from flowing, resulting in a switch off operation.
The SD2903 is an ideal solution for radios and other high frequency applications due to its low-noise, high power handling capabilities, low-input capacitance, and high-output power for high-gain operation. Its low capacitance and low resistance make it an ideal choice for these types of applications, and its relative ease of use makes it an ideal choice for system designs that require a high degree of integration.
The specific data is subject to PDF, and the above content is for reference
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|---|
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SD2903 Datasheet/PDF