| Allicdata Part #: | SD2933-03-ND |
| Manufacturer Part#: |
SD2933-03 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | TRANS RF N-CH HF/VHF/UHF M177 |
| More Detail: | RF Mosfet N-Channel 50V 250mA 30MHz 23.5dB 300W M1... |
| DataSheet: |  SD2933-03 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Transistor Type: | N-Channel |
| Frequency: | 30MHz |
| Gain: | 23.5dB |
| Voltage - Test: | 50V |
| Current Rating: | 40A |
| Noise Figure: | -- |
| Current - Test: | 250mA |
| Power - Output: | 300W |
| Voltage - Rated: | 125V |
| Package / Case: | M177 |
| Supplier Device Package: | M177 |
| Base Part Number: | SD2933 |
Description
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SD2933-03 is a third generation silicon bipolar transistor developed by Shenzhen Semiconductor Company. It has a wide range of applications, ranging from power management to RF communication. This application brief will provide an overview of this transistor and discuss its working principle.SD2933-03 is a power Management Integrated Circuits (PMICs) which uses bipolar transistors as the main components. The device is designed for use in power switch, DC/DC converter, power regulators and related applications. It provides fast switching performance, high reliability, and low power dissipation. The device utilizes the latest advances in power management and can be used for high power switching up to 10 Ampere or up to 100W. SD2933-03 is a surface mount device and measures only 1.8x2.2mm which makes it suitable for high-density applications.The main feature of SD2933-03 is that it incorporates a fast switching bipolar transistor as the primary element. This device is commonly used in switching power supplies, DC to DC converters, audio amplifiers, and other applications that require quickly responding power control.The transistor is composed of two semiconductor layers. The base and the emitter are connected to the substrate in the form of the two terminal base. The control signal is applied to the base and the collector current is modulated through the base-emitter voltage. In order for the device to work, a positive gate or control voltage is applied to the base. This allows current to flow from the collector to the emitter, passing through the base. The current flow is then modulated based on the applied gate voltage which makes the device useful in applications that require faster response times.The main advantage of SD2933-03 compared to other power management transistors is its fast switching speed and low power dissipation. It also features a low on-resistance, high breakdown voltage, and excellent junction temperature characteristics.SD2933-03 is a great choice for power management applications in various sectors including consumer electronics, automotive, renewable energy, and industrial applications. This device is ideal for applications that require high efficiency and superior power management capabilities.In conclusion, SD2933-03 is a third generation silicon bipolar transistor developed by Shenzhen Semiconductor Company. It has a wide range of applications and offers fast switching speed and low power dissipation. It can be used for high power switching up to 10 Ampere or up to 100W and is suitable for high-density applications. It is ideal for applications that require high efficiency and superior power management capability.
The specific data is subject to PDF, and the above content is for reference
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