SD2932BW

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The SD2932BW is a RF power field-effect transistor (FET), which is practically designed for common source intermediate power amplifier applications. It is compatible with most commercially available modulation techniques for operation in the DC to 400MHz frequency range and is used in wireless applications such as wireless LANs and Bluetooth. Furthermore, this power field-effect transistor can also be used in a variety of other RF circuits and applications.

The SD2932BW is a high-powered RF FET in a discrete surface-mount plastic package. It includes an integrated source inductor. This normally-off FET is common source configured and provides excellent thermal stability, high gain flatness and low noise figure. The typical single-ended gain flatness of the amplifier is 3dB while the power handling capability is 35dBm.

The various features of the SD2932BW are as follows:

• Rated drain current: 2.0A
• Frequency range: DC to 400MHz
• Gain flatness: 3dB
• Power handling capability: 35dBm
• Load impedance: 50 ohms
• High input/output isolation
• Integrated source inductor
• Thermal stability, low bias current

The SD2932BW power FET is usually used in two modes, i.e. as a linear amplifier or as a switching/chopping amplifier. As a linear amplifier, it offers a wide range of signal source gain, while as a switching amplifier it is capable of switching high level signals, and chopping low level signals.

The working principle of the SD2932BW power FET is that it is a three-terminal device in which an input signal is applied across the gate and source of the transistor, and an output signal is conducted by the drain. In the linear mode, the output signal is an amplified version of the input signal and is obtained throughout a wide range of signal source gain, while in the switching/chopping mode, a switch-on/switch-off operation of the transistor is observed. The FET is normally operated in the off state and turns on/off when a signal is applied at its gate.

The construction of a field-effect transistor is based on a semiconductor material, and it can be seen as a three-layer structure, i.e., a source region, the gate region, and the drain region. The source and drain of the FET have a heavily doped, short-circuited N-type region, separated by a lightly doped junction-isolated N-type region that comprises the gate. As a result, a voltage applied across the gate region produces a field across the N-type junction, which in turn produces a depletion region.

The linear mode of operating the SD2932BW makes it suitable for common source intermediate power amplifier applications that require high power handling capabilities and reliable performance. As a result, the SD2932BW has a wide range of applications in wireless communication systems such as Bluetooth and wireless LANs, audio and data receiving and transmitting systems, amateur radio systems, and many others.

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