SD2943W

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SD2943W is a surface mount N-channel enhancement mode gallium arsenide field effect transistor (GaAs FET) and it is classified within the RF FET family of transistors. Such devices are often used in high-speed circuits that require wide frequency range, high power and high linearity. The SD2943W offers a flexible and high performance solution when used in low noise amplifier (LNA) and power amplifier (PA) circuits.

The SD2943W is designed & manufactured in a MindiTM (Mini Grid Array) package and it is constructed from an advanced self-align GaAs MESFET technology. The device is offered in a RoHS compliant package with a built-in latch protecting circuit. It features a wide operating transition frequency range between 1 to 5GHz and can work up to 6GHz.

The typical characteristics of this RF FET include a highly linear and low noise performance, typically exhibited by its maximum stable gain, high output power, low noise figure and low input return loss. The transistor is designed for wireless communication applications including wireless local area networks (WLANs), WiMAX, Bluetooth®, wireless multimedia, broadband wireless access and global positioning systems (GPSs).

The SD2943W transistor’s working principle is based on the field-effect control phenomenon occurring when a voltage is applied to the gate-source pin. This causes the formation of a depletion region in the channel between the drain and the source. This channel is composed of mobile charge carriers (electrons or holes) which flow in response to the applied drain-source bias. The application of a gate-source voltage creates a conductive region within the channel, allowing current to flow from the source to the drain.

The smaller the channel, the greater the resistance and thus the higher the frequency. The SD2943W transistor’s operating frequency is also affected by its gate capacitance, which is related to the gate size. The gate capacitance is an important parameter for RF applications since it determines the bias point and affects the transistor’s amplification factor. The device also features an internal gate bias circuit which provides the required gate bias for the best gain linearity across the operating frequency range.

In conclusion, the SD2943W transistor is an excellent device for use in RF circuits such as low noise amplifiers and power amplifiers. It offers a high performance solution with a wide frequency range, high power, low noise, low power consumption and a built-in latch protecting circuit in a RoHS compliant package. The device’s working principle is based on the field-effect control phenomenon, which is an important parameter for RF applications, to determine the bias point and affect the transistor’s amplification factor.

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