SD2932

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	N-Channel
Frequency:	175MHz
Gain:	16dB
Voltage - Test:	50V
Current Rating:	40A
Noise Figure:	--
Current - Test:	500mA
Power - Output:	300W
Voltage - Rated:	125V
Package / Case:	M244
Supplier Device Package:	M244
Base Part Number:	SD2932

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SD2932 is a high-frequency N-channel enhancement mode MOSFET (metal-oxide semiconductor field-effect transistor) that has been specifically designed for use in RF (radio-frequency) applications. It is manufactured in a plastic-encapsulated TO-252-5L “PowerPAK SO-8” package, and its maximum operating voltage (VDS Max) is 50 V. It also has a continuous drain current (ID) of 4.4 A.The MOSFET is a three-terminal electronic component, consisting of a source, a drain, and a gate. The source and drain are conductive terminals that function as the two electrodes of a transistor. The gate is an input terminal used to modulate the flow of electric current between the source and drain. The SD2932 is an enhancement type MOSFET, which means that the gate voltage needs to be raised in order to allow current to flow between the source and drain.The SD2932 is specifically designed for RF applications, and its specifications reflect this. It has a fast switching speed, a large transconductance, and a low on-resistance. It also has a wide gate-source voltage range, allowing it to handle high voltages, and a low thermal resistance, allowing it to efficiently dissipate heat.In operation, the SD2932 functions as an RF switch. When the gate voltage is set to a logic high state, the MOSFET is turned on, allowing current to flow between the source and drain. Conversely, when the gate voltage is set to a logic low state, the MOSFET is turned off, effectively breaking the connection between the source and drain.The SD2932 is suitable for use in a variety of RF applications, including but not limited to mobile communications, wireless networking, broadcast radio, and RF remote control systems. This is because it is able to efficiently handle high frequency signals while simultaneously providing low signal distortion, high signal linearity, and low power dissipation.In summary, the SD2932 is a high-frequency N-channel enhancement mode MOSFET that has been specifically designed for use in RF applications. It has fast switching speeds, a wide gate-source voltage range, a low thermal resistance, and a large transconductance. It is suitable for use in a variety of RF applications, and its ability to handle high frequency signals while simultaneously providing low signal distortion and power dissipation make it an ideal choice for RF systems.

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