SE100PWJ-M3/I Allicdata Electronics
Allicdata Part #:

SE100PWJ-M3/I-ND

Manufacturer Part#:

SE100PWJ-M3/I

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 10A SLIMDPAK
More Detail: Diode Standard 600V 10A Surface Mount SlimDPAK
DataSheet: SE100PWJ-M3/I datasheetSE100PWJ-M3/I Datasheet/PDF
Quantity: 1000
4500 +: $ 0.15538
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: eSMP®
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SE100PWJ-M3/I devices, a type of single rectifier diodes, are used in a variety of applications including power supplies, rectification and wave generation. They are designed to provide very good repeatability and efficiency. The devices have a low total capacitance, allowing them to operate at higher frequencies with improved efficiency. The device also features an ultra-low reverse leakage current that allows for very high speed switching.

SE100PWJ-M3/I devices have a low forward voltage drop that enables increased power delivery to the load. This low voltage drop reduces power dissipation in the device, allowing for larger output currents or higher efficiency. The efficient design also contributes to the ability of the device to cool quickly compared to other types of rectifier diodes.

The SE100PWJ-M3/I devices are implemented in digital applications such as switching, pulse width modulation (PWM), logic gates, flip-flops, and DC/DC converters. They can also be used in digital-sensing circuits such as infrared sensors and optical detectors. In addition, they can be used in pulse-width modulation (PWM) applications to generate reliable, high-frequency signals.

The SE100PWJ-M3/I devices can also be used in power supplies, linear regulators, and power converters. The device is designed to reduce power dissipation and to improve the efficiency of the power supply. The device also features a low on-state resistance, allowing for low conduction losses and improved current delivery. It also has a high circuit breaking capacity, allowing for load currents beyond its rated current.

The device works by allowing an electric current to flow from the anode to the cathode. An electric field is then established between the component\'s anode and cathode which is proportional to the reverse voltage applied to the device. The electric field generated causes the electrons to move from the anode to the cathode and this is what causes the current to flow. The current flow is then limited by the device\'s forward voltage drop as well as its forward current rating.

The device can also offer protection against high-energy transients and ESD. The low saturation voltage and reverse leakage current of the device allow for more efficient operation in digital devices and circuits. The device is also designed to handle high frequency switching and to operate within its ratings in noise-sensitive applications.

The SE100PWJ-M3/I is a reliable and efficient device designed for a variety of applications. It has a low forward voltage drop allowing for increased power delivery to the load, a low on-state resistance, and high circuit-breaking capacity. It is also designed to reduce power dissipation, improve power supply efficiency, and protect against high-energy transients and ESD. The device is suitable for use in power supplies, linear regulators, DC/DC converters, digital-sensing circuits and pulse-width modulation (PWM) applications.

The specific data is subject to PDF, and the above content is for reference

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