SE10DBHM3/I Discrete Semiconductor Products |
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Allicdata Part #: | SE10DBHM3/IGITR-ND |
Manufacturer Part#: |
SE10DBHM3/I |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 3A TO263AC |
More Detail: | Diode Standard 100V 3A (DC) Surface Mount TO-263AC... |
DataSheet: | SE10DBHM3/I Datasheet/PDF |
Quantity: | 4000 |
2000 +: | $ 0.23020 |
6000 +: | $ 0.21433 |
10000 +: | $ 0.21168 |
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 10A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3000ns |
Current - Reverse Leakage @ Vr: | 15µA @ 100V |
Capacitance @ Vr, F: | 67pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
Supplier Device Package: | TO-263AC (SMPD) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Introduction
The SE10DBHM3/I is a single-phase fast recovery diode, used to rectify the input voltage and current in a variety applications. Its high efficiency and fast recovery time make it ideal for a wide range of AC-DC rectification applications. This article will discuss the application fields and working principles of the SE10DBHM3/I.
Application Fields
The SE10DBHM3/I is primarily used for AC-DC rectification applications such as Mobile Phones, Automotive Electronics, Uninterruptible Power Supplies (UPSs), Smart Grid, Low Voltage Adjusters (LVAs) and AC/DC Switched-Mode Power Supply (SMPS) machines. It is also suitable for industrial and consumer electronics.
The fast recovery characteristics of the SE10DBHM3/I allow it to rectify alternating currents with a wide range of frequencies and voltages. This makes the device useful in a variety of different applications, including the conversion of mains-frequency AC power to DC, the conversion of AC power to better-regulated DC power, and the conversion of AC power to high-frequency DC power for powering high-resolution electronics such as PCs and LCDs.
Working Principle
The SE10DBHM3/I is a fast-recovery diode which uses external regions of N-type and P-type silicon material, forming a PN junction. During operation, the P-type layer is connected to the anode (+) and the N-type layer is connected to the cathode (-). When a voltage is applied to the device, electrons from the N-type layer are attracted to the anode, creating a current.
When current flows into the device, the amount of charge carriers builds up and the PN junction becomes more forward-biased. This builds an electric field between the P and N layers and prevents further current flow - a process called Avalanche Breakdown. This reduces the forward voltage drop and provides the device with its fast recovery time. Once the forward voltage is removed, the electric field created by the avalanche breakdown quickly dissipates, allowing the current to flow again.
Conclusion
The SE10DBHM3/I is a single-phase fast recovery diode, used to rectify the input voltage and current in a variety of AC-DC rectification applications. Its fast recovery time allows it to easily rectify AC with a wide range of frequencies and voltages. The working principle of the SE10DBHM3/I is based on the process of Avalanche Breakdown, which creates an electric field between the P and N layers, preventing further current flow and providing the device with its fast recovery time.
The specific data is subject to PDF, and the above content is for reference
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